AVS 60th International Symposium and Exhibition
    Thin Film Wednesday Sessions
       Session TF+VT-WeM

Invited Paper TF+VT-WeM3
Improving the Reliability of Electronics Using ALD Barrier Films

Wednesday, October 30, 2013, 8:40 am, Room 104 A

Session: Thin Film Permeation Barriers and Encapsulation
Presenter: S. Graham, Georgia Institute of Technology
Authors: S. Graham, Georgia Institute of Technology
H. Kim, Georgia Institute of Technology
A. Sharma, Georgia Institute of Technology
D. Samet, Georgia Institute of Technology
A. Bulusu, Georgia Institute of Technology
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The development of ultra barrier films has been seen as an enabling technology for the packaging and reliability of organic electronic devices. While a number of technologies exists for creating ultra barrier coatings, atomic layer deposition has been viewed as a leading technology for creating single layer and nanolaminate barriers with molecular level control of the film thickness and composition. Such control allows for the creating of barriers with multiple functionality that can be utilized in organic electronics and extended to other electronic platforms. In this talk, we will discuss the development of ALD ultra barrier films based on several oxides that are targeted for packaging organic electronics as well as creating highly stable interfaces for their improved lifetime and stability. Methods to control or enhance the nucleation of these films on polymer and metallic surfaces with the aid of surface functionalization groups will be discussed. The mechanical properties of the ALD films in terms of their onset cracking strain and its impact on the limitations of flexible electronics will be discussed. Finally, the stability of these barrier films when exposed to harsh environmental conditions including damp heat and aqueous solutions will be presented. Stability of the films was determined through a variety of methods including photoluminescence, XPS, UPS, and atomic force microscopy. Films showing superior stability in these environments will be demonstrated through the coating of both organic and inorganic electronics and showing improvements in their stability in harsh environments.