AVS 60th International Symposium and Exhibition, Session GR+AS+EM+NS+SS-WeA

AVS 60th International Symposium and Exhibition
Graphene and Other 2D Materials Focus Topic	Wednesday Sessions

Session GR+AS+EM+NS+SS-WeA
Dopants, Defects and Interfaces in 2D Materials

Wednesday, October 30, 2013, 2:00 pm, Room 104 B
Moderators: B.J. LeRoy, University of Arizona, A. Sinitskii, University of Nebraska-Lincoln

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in Adobe Acrobat format

Click a paper to see the details. Presenters are shown in bold type.

2:00pm	GR+AS+EM+NS+SS-WeA1 Atomic Force Acoustic Microscopy Detecting Defects in Graphene-Substrate Interface Q. Tu, Z. Parlak, R. Ferris, S. Zauscher, Duke University
2:20pm	GR+AS+EM+NS+SS-WeA2 Polarization Induced p-type Doping in the H-intercalated Epitaxial Graphene on SiC(0001) S. Rajput, M. Chen, Y.Y. Li, M. Weinert, L. Li, University of Wisconsin Milwaukee
2:40pm	GR+AS+EM+NS+SS-WeA3 Invited Paper Engineering Chemical Dopants in Monolayer Graphene A. Pasupathy, Columbia University
4:00pm	GR+AS+EM+NS+SS-WeA7 Water-Induced Splitting of Epitaxial Graphene and Resulting Graphene Flake X. Feng, M.B. Salmeron, Lawrence Berkeley National Laboratory
4:20pm	GR+AS+EM+NS+SS-WeA8 STS Observation of Landau Levels on the Flat Area of Nitrogen-doped HOPG Surface under the Zero Magnetic Fields T. Kondo, D. Guo, T. Sikano, T. Suzuki, M. Sakurai, J. Nakamura, University of Tsukuba, Japan
4:40pm	GR+AS+EM+NS+SS-WeA9 X-ray Photoelectron Spectroscopy Investigation of the Band Alignment at h-BN/Graphene/High-k Dielectric Interfaces M. Paquette, J. Otto, Univ. of Missouri-Kansas City, S.W. King, J.D. Bielefeld, M. Jaehnig, M. French, B. French, M. Kuhn, Intel Corp., B. Nordell, A.N. Caruso, Univ. of Missouri-Kansas City, Y. Song, MIT, R. Caudillo, Intel Corp., J. Kong, MIT
5:00pm	GR+AS+EM+NS+SS-WeA10 Epitaxial Graphene Bands and Adsorption of FePc for Stepped SiC-Si Surfaces J.E. Rowe, D.B. Dougherty, A.A. Sandin, North Carolina State University, A. Al-Mahboob, J.T. Sadowski, Brookhaven National Laboratory
5:20pm	GR+AS+EM+NS+SS-WeA11 Invited Paper Atomic Collapse in Graphene: Exploring Tunable Charge Impurities at the Nanometer Scale M.F. Crommie, Y. Wang, D. Wong, University of California, Berkeley, V.W. Brar, California Institute of Technology, H.-Z. Tsai, S. Choi, W. Regan, University of California, Berkeley, R. Kawakami, University of California, Riverside, A.V. Shytov, University of Exeter, UK, A. Zettl, S.G. Louie, University of California, Berkeley, L.S. Levitov, Massachusetts Institute of Technology