AVS 60th International Symposium and Exhibition
    Graphene and Other 2D Materials Focus Topic Wednesday Sessions
       Session GR+AS+EM+NS+SS-WeA

Paper GR+AS+EM+NS+SS-WeA9
X-ray Photoelectron Spectroscopy Investigation of the Band Alignment at h-BN/Graphene/High-k Dielectric Interfaces

Wednesday, October 30, 2013, 4:40 pm, Room 104 B

Session: Dopants, Defects and Interfaces in 2D Materials
Presenter: M. Paquette, Univ. of Missouri-Kansas City
Authors: M. Paquette, Univ. of Missouri-Kansas City
J. Otto, Univ. of Missouri-Kansas City
S.W. King, Intel Corp.
J.D. Bielefeld, Intel Corp.
M. Jaehnig, Intel Corp.
M. French, Intel Corp.
B. French, Intel Corp.
M. Kuhn, Intel Corp.
B. Nordell, Univ. of Missouri-Kansas City
A.N. Caruso, Univ. of Missouri-Kansas City
Y. Song, MIT
R. Caudillo, Intel Corp.
J. Kong, MIT
Correspondent: Click to Email
Due to a wide band gap (~ 6 eV), close lattice matching (< 2%) and atomic planarity, hexagonal boron nitride (h-BN) is of interest as a potential substrate and gate dielectric in graphene channel transistor devices. A key property for the success of h-BN as a gate dielectric in such devices is its interfacial band alignment with graphene, the gate contact metallization and the surrounding insulating dielectric materials. In this regard, we have utilized x-ray photoelectron spectroscopy (XPS) to determine the Schottky barrier and valence band offsets present at the interfaces between plasma enhanced chemically vapor deposited amorphous h-BN:H and a variety of materials including graphene, Cu, SiO2, a-SiNx:H, a-SiC:H, and Si. In combination, we have also investigated the valence band alignment between graphene and various high-k dielectrics including Al2O3, HfO2, ZrO2, and TiO2. Combined with reflection electron energy loss spectroscopy measurements of the band gaps for the respective dielectric materials, we have also been able to determine the conduction band offset at these interfaces. We show that in many instances the valence and conduction band offsets are significant (> 2 eV) and favorable for a variety of possible h-BN/graphene transistor devices.