| AVS 60th International Symposium and Exhibition | |
| Graphene and Other 2D Materials Focus Topic | Wednesday Sessions |
| Session GR+AS+EM+NS+SS-WeA |
| Session: | Dopants, Defects and Interfaces in 2D Materials |
| Presenter: | S. Rajput, University of Wisconsin Milwaukee |
| Authors: | S. Rajput, University of Wisconsin Milwaukee M. Chen, University of Wisconsin Milwaukee Y.Y. Li, University of Wisconsin Milwaukee M. Weinert, University of Wisconsin Milwaukee L. Li, University of Wisconsin Milwaukee |
| Correspondent: | Click to Email |
Hydrogen intercalation at the epitaxial graphene/SiC(0001) interface was achieved by annealing in hydrogen atmosphere at 800 oC. Raman spectroscopy, scanning tunneling microscopy and spectroscopy measurements were performed to determine the electronic and structural properties of the H-intercalated graphene. We find that while the as-grown graphene is n-type with the Dirac point at -0.35 eV below Fermi level, the H-intercalated graphene is p-type with a Dirac point +0.2 eV above the Fermi level. These results are explained by density functional theory calculations, which indicate that the carrier type and concentration in H-intercalated graphene/SiC are determined by the spontaneous polarization of the hexagonal SiCsubstrate.