| AVS 60th International Symposium and Exhibition | |
| Electronic Materials and Processing | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | EM-MoA1 Invited Paper Silicene, an Option for Future Electronics A. Molle, D. Chiappe, E. Cinquanta, CNR-IMM, Italy, C. Grazianetti, M. Fanciulli, Università degli Studi di Milano Bicocca, Italy |
| 2:40pm | EM-MoA3 Fabrication and Electrical Characterization of High-k/Germanium Tri Gate MOSFETs Grown by MBE on Bulk Silicon S. Anwar, C. Buie, C.L. Hinkle, University of Texas at Dallas |
| 3:00pm | EM-MoA4 Sub 1-nm Ge-MOSFET with TiO2/Al2O3 Gate Stacks and Interface Trap Passivation by Forming Gas Anneal L. Zhang, P.C. McIntyre, Stanford University |
| 3:40pm | EM-MoA6 Invited Paper Surface Passivation of III-V Antimonides and Ge Based MOSFETs K.C. Saraswat, S. Gupta, A. Nainani, Stanford University, B. Yang, GLOBALFOUNDRIES U.S. Inc., Z. Yuan, Stanford University |
| 4:20pm | EM-MoA8 High-Carrier-Mobility p- and n-Type Field Effect Transistors Fabricated on Large-Area Wafer-Scale Ge Film Epitaxially Grown on Si S. Ghosh, S.M. Han, University of New Mexico |
| 4:40pm | EM-MoA9 Passivation, Functionalization, and Atomic Layer Deposition Nucleation of SiGe(100) via H2O and H2O2 T. Kaufman-Osborn, A.J. Kerr, A.C. Kummel, University of California, San Diego |
| 5:00pm | EM-MoA10 Invited Paper III-V on Insulator (XOI): Processes, Materials, and Devices A. Javey, University of California at Berkeley |