AVS 60th International Symposium and Exhibition
    Electronic Materials and Processing Monday Sessions
       Session EM-MoA

Invited Paper EM-MoA10
III-V on Insulator (XOI): Processes, Materials, and Devices

Monday, October 28, 2013, 5:00 pm, Room 101 B

Session: High-k Gate Oxides for High Mobility Semiconductors II
Presenter: A. Javey, University of California at Berkeley
Correspondent: Click to Email
Two-dimensional (2-D) semiconductors exhibit excellent device characteristics, as well as novel optical, electrical, and optoelectronic properties due to quantum size-effects. In this talk, I will discuss layer transfer of single crystalline III-V semiconductors with nanoscale thicknesses on Si/SiO2 substrates. The resulting III-V-on-insulator (XOI) substrates enable the exploration of a wide-range of device applications, while allowing for fundamental science exploration of the carrier properties as a function of thickness, without the constraints of the original growth substrates. Specifically, the quantized sub-bands of ultrathin III-V membranes (3-20 nm in thickness) are directly visualized by optical absorption studies. The measured effective bandgap is shown to increase by ~3x for InAs XOI as the layer thickness is reduced to ~3nm. Through experiments and modeling, we demonstrate the drastic role of carrier quantum confinement on the contact resistance and carrier transport properties of field-effect transistors (FETs). These results provide an important advance towards establishing the fundamental device physics of 2-D semiconductors. Additionally, high performance InAs and InGaSb complementary XOI-FETs are fabricated on Si substrates with electron and hole mobilities of ~4000 and 800 cm2/Vs, respectively. This presents the first III-V CMOS demonstration. Overall, the results shed light on the performance limits of III-V ultrathin body FETs.