| AVS 59th Annual International Symposium and Exhibition | |
| Plasma Science and Technology | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | PS1-ThM2 Damage Free Cryogenic Etching of Porous Organosilica Ultralow-k Film L. Zhang, IMEC, Belgium, R. Ljazouli, T. Tillocher, P. Lefaucheux, R. Dussart, GREMI CNRS/Université d'Orléans, France, Y. Mankelevich, Moscow State University, Russia, J.-F. de Marneffe, S. de Gendt, M.R. Baklanov, IMEC, Belgium |
| 8:40am | PS1-ThM3 Deep GaN Etching : Role of SiCl4 in Plasma Chemistry J. Ladroue, GREMI - STMicroelectronics, France, M. Boufnichel, STMicroelectronics, France, T. Tillocher, P. Lefaucheux, P. Ranson, R. Dussart, GREMI - Polytech Orleans/CNRS, France |
| 9:20am | PS1-ThM5 Etching Reaction Analysis of CoFeB by Carbon Monoxide / Methyl Alcohol Based Plasmas K. Karahashi, T. Ito, S. Hamaguchi, Osaka University, Japan |
| 9:40am | PS1-ThM6 The Etching Characteristics of Flexible Substrate in Inductively Coupled Plasma System for Flexible Electronics Y.S. Chun, Y.H. Joo, C.I. Kim, Chung-Ang University, Republic of Korea |
| 10:40am | PS1-ThM9 Invited Paper Plasma Process Developments for Spintronics Devices K. Kinoshita, Tohoku University, Japan |
| 11:20am | PS1-ThM11 Predictions of the Etch Behavior of Complex Oxide Films for High-k and Multiferroic Applications N. Marchack, J. Chen, J.P. Chang, University of California at Los Angeles |
| 11:40am | PS1-ThM12 Sub-30nm Pitch Patterning of FEOL Materials for Aggressively Scaled CMOS Devices for 10 nm Node and Beyond H. Miyazoe, S. Engelmann, H. Tsai, M. Brink, B.N. To, IBM T.J. Watson Research Center, J. Cheng, C. Liu, IBM Research - Almaden, W.S. Graham, E.M. Sikorski, M.A. Guillorn, N.C.M. Fuller, E.A. Joseph, IBM T.J. Watson Research Center |