AVS 59th Annual International Symposium and Exhibition | |
Electronic Materials and Processing | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
8:00am | EM-TuM1 Invited Paper Characterization, Modeling and Control of Fermi Level Pinning Phenomena at III-V High-k MOS Gate Stack Interfaces H. Hasegawa, Hokkaido University and RIKEN, Japan |
8:40am | EM-TuM3 An Investigation into the Origin of Anomalous Frequency Dispersion in Accumulation Capacitance of MOS Devices on III-V Substrates R.V. Galatage, D.M. Zhernokletov, H. Dong, B. Brennan, C.L. Hinkle, R.M. Wallace, University of Texas at Dallas, E.M. Vogel, Georgia Institute of Technology |
9:00am | EM-TuM4 Evaluation of Atomic Layer Deposited High-k Dielectrics on GaAs H.J. Lim, Y.J. Choi, S.H. Lee, Seoul National University, Republic of Korea, J.H. Ku, N.I. Lee, Samsung Electronics Co. Ltd., Republic of Korea, H.J. Kim, Seoul National University, Republic of Korea |
9:20am | EM-TuM5 Invited Paper High Energy XPS and Electrical Characterisation Studies of Metal Oxide Semiconductor Structures on Si, GaAs and InGaAs G.J. Hughes, L.A. Walsh, Dublin City University, Ireland, P.K. Hurley, J.H. Lin, Tyndall National Laboratory, Ireland, J.C. Woicik, National Institute of Standards and Technology |
10:40am | EM-TuM9 Metastable Centers and Localized States in AlGaN/AlN/GaN Heterostructures Studied by C-V, Admittance Spectroscopy, and DLTS A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, E.A. Kozhukhova, Institute of Rare Metals, Russian Federation, S.J. Pearton, F. Ren, L. Lu, University of Florida, S.Y. Karpov, Soft-Impact, Ltd, Russian Federation, W. Lim, Samsung LED, Republic of Korea |
11:00am | EM-TuM10 Characterizations of Proton-irradiated GaN and 4H-SiC by KOH Etching H.-Y. Kim, Korea University, Y.J. Shin, W. Bahng, Korea Electrotechnology Research Institute, J. Kim, Korea University |
11:20am | EM-TuM11 Invited Paper Trapping Centers in High -k Dielectrics for MOS Devices P. Lenahan, Pennsylvania State University |