AVS 59th Annual International Symposium and Exhibition, Session AS-ThA

AVS 59th Annual International Symposium and Exhibition
Applied Surface Science	Thursday Sessions

Session AS-ThA
Applications of Large Cluster Ion Beams - Part 2 (2:00-3:20 pm)/ Surface Analysis using Synchrotron Techniques (3:40-5:40 pm)

Thursday, November 1, 2012, 2:00 pm, Room 20
Moderators: A.V. Walker, University of Texas at Dallas, C.M. Mahoney, Pacific Northwest National Laboratory, M.L. Pacholski, The Dow Chemical Company, A. Herrera-Gomez, UAM-Azcapotzalco and CINVESTAV-Queretaro, Mexico

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in Adobe Acrobat format

Click a paper to see the details. Presenters are shown in bold type.

2:00pm	AS-ThA1 Applications of a C60 Ion Source for Surface Chemical Analysis: It’s Not Just for Polymers W.F. Stickle, M.D. Johnson, D. Bilich, HP
2:20pm	AS-ThA2 Towards Ultimate Organic Depth Profiling using Argon Cluster Beams – Recommendations for Dual Beam Profiling and Sample Charge Compensation R. Havelund, A.G. Shard, M.P. Seah, I.S. Gilmore, National Physical Laboratory, UK
2:40pm	AS-ThA3 Comparative Study of C₆₀ and Gas Cluster Ion Sputtering in XPS Depth Profiling for Thin Film Analysis S.S. Alnabulsi, J.F. Moulder, S.N. Raman, S.R. Bryan, J.S. Hammond, Physical Electronics
3:00pm	AS-ThA4 Damage Profiles of Si (001) Surfaces Bombarded by Ar Gas Cluster Ion Beam J.G. Chung, D.J. Yun, Y.K. Kyoung, H.I. Lee, J.C. Lee, Samsung Advanced Institute of Technology, Republic of Korea, H.J. Kang, Chungbuk National University (CBNU), Republic of Korea
3:40pm	AS-ThA6 Non-Destructive Depth Profiling using VKE-XPS and Maximum Entropy Regularization C. Weiland, J.C. Woicik, National Institute of Standards and Technology
4:00pm	AS-ThA7 The Early Stage of Corrosion of Cu₃Au Alloy P. Rajput, ESRF, France, A. Gupta, UGC-DAE Consortium for Scientific Research, India, C. Meneghini, Universita di“Roma Tre”, Italy, G. Sharma, UGC-DAE Consortium for Scientific Research, India, J. Zegenhagen, ESRF, France
4:20pm	AS-ThA8 Invited Paper Hard X-ray Photoelectron Spectroscopy (HAXPES) Investigations of Electronic Materials and Interfaces J.C. Woicik, National Institute of Standards and Technology
5:00pm	AS-ThA10 Hard X-ray Photoemission Spectroscopy used to Investigate the Resistive Switching Behavior of Manganite Heterostructures: The Case of Ti/PrCaTiO₃ Interface F. Offi, CNISM and Dipartimento di Fisica, Università Roma Tre, Italy, F. Borgatti, CNR-ISMN, Bologna, Italy, Y. Yamashita, A. Yang, M. Kobata, K. Kobayashi, Synchrotron X-ray Station at SPring-8, NIMS, Japan, C. Park, A. Herpers, R. Dittmann, Peter Grünberg Institut, Research Center Jülich, Germany, G. Panaccione, CNR-IOM, Basovizza-Trieste, Italy