AVS 59th Annual International Symposium and Exhibition
    Applied Surface Science Thursday Sessions
       Session AS-ThA

Paper AS-ThA4
Damage Profiles of Si (001) Surfaces Bombarded by Ar Gas Cluster Ion Beam

Thursday, November 1, 2012, 3:00 pm, Room 20

Session: Applications of Large Cluster Ion Beams - Part 2 (2:00-3:20 pm)/ Surface Analysis using Synchrotron Techniques (3:40-5:40 pm)
Presenter: J.G. Chung, Samsung Advanced Institute of Technology, Republic of Korea
Authors: J.G. Chung, Samsung Advanced Institute of Technology, Republic of Korea
D.J. Yun, Samsung Advanced Institute of Technology, Republic of Korea
Y.K. Kyoung, Samsung Advanced Institute of Technology, Republic of Korea
H.I. Lee, Samsung Advanced Institute of Technology, Republic of Korea
J.C. Lee, Samsung Advanced Institute of Technology, Republic of Korea
H.J. Kang, Chungbuk National University (CBNU), Republic of Korea
Correspondent: Click to Email
The damage profiles of Si (001) surface bombarded by argon gas cluster ion beam (GCIB) and mono-atomic argon ion beam bombardment were investigated using X-ray photoelectron spectroscopy (XPS) and medium energy ion scattering (MEIS). The Ar-GCIB beam was 2 mm in diameter and scanned in an area of 3 mm × 4 mm and the beam current was about 60 nA. The incident angle of the GCIB was fixed at 55° from the surface normal and the mean cluster size was approximately 2500 argon atoms/cluster. The damage profiles of Si (001) bombarded by the Ar GCIB and the mono-atomic Ar ion beam sputtering were measured ex-situ MEIS system and in-situ MEIS system, respectively. The MEIS results showed that the thickness of the damaged layers on Si(100) is approximately 10 nm for 20 keV, 6.4 nm for 10 keV, and 4.2 nm for 5 keV after the Ar cluster ion dose of 2.3 x 1015 clusters/cm2 and the maximum concentration of the implanted Ar atoms is 0.2 at% for 20 keV and 0.1 at% for both10 keV and 5 keV. The MEIS spectra taken from the Si (001) surface before and after the Ar ion bombardment with the ion dose of 5 x 1016 ions/cm2 showed that the maximum Ar atom concentration was 5.5, 5.8, and 7.8 at% and the damage depth was 5.3 nm, 8.5 nm and 12 nm at 1.0, 2.0, and 3.0 keV, respectively. The depth of the damaged layer is proportional to the in-depth distribution of the implanted primary ions which can be explained in terms of the collision cascade model. Our results showed that the damage did not result from the linear collision cascade for the sample bombarded by Ar GCIB sputtering since the primary cluster Ar atoms were not implanted into the subsurface. The mechanism for the damage generation via the Ar GCIB bombardment is not clear yet, but it should be understood to make it useful for practical applications in solid surface analysis such as SIMS, XPS and AES.