AVS 58th Annual International Symposium and Exhibition
    Applied Surface Science Division Tuesday Sessions

Session AS-TuP
Applied Surface Science Poster Session

Tuesday, November 1, 2011, 6:00 pm, Room East Exhibit Hall


  Click here to Download program book for this session  
  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

AS-TuP2
An Electrostatic Analytical Microscope for SEM/SAM Surface Studies with 3nm-7nm Spatial Resolution
Andrew Walker, M. Rignall, Shimadzu Research Laboratory (Europe) Ltd., UK
AS-TuP3
Core Level Shift from Experiment and First-Principles-Theory – A Comparison
Boris Kiefer, New Mexico State University, B. Halevi, K. Artyushkova, University of New Mexico
AS-TuP4
Evaluation of C60 Depth Profiling Conditions for XPS Organic Films Analysis
Saad Alnabulsi, S.R. Bryan, J. Moulder, Physical Electronics
AS-TuP5
Development and Application of Novel Electron Energy Analyzers for Chemical Analysis of Surfaces
Dane Cubric, Shimadzu Research Laboratory (Europe) Ltd., UK, N. Kholine, Institute for Analytical Instrumentation, RAS, Russian Federation
AS-TuP6
Extreme Brightness: Reaching the Ultimate Limits of the Electron Beam
Jonathan Jarvis, J.L. Kohler, B. Ivanov, N. De Jonge, B.K. Choi, A.B. Hmelo, C.A. Brau, Vanderbilt University
AS-TuP8
Surface Characterization of Disposable Laboratory Gloves by X-ray Photoelectron Spectroscopy (XPS)
B.R. Strohmeier, Christopher Baily, T.S. Nunney, Thermo Fisher Scientific, UK, A. Plasencia, Thermo Fisher Scientific, J.D. Piasecki, RJ Lee Group, Inc.
AS-TuP10
Large Area Cross Sectional Microstructural Characterization of ToF-SIMS Depth Profile Crater Walls
Vincent S. Smentkowski, D. Ellis, GE-GRC
AS-TuP11
Microphase Separation of Various Diblock Copolymers Investigated by TOF-SIMS Depth Profiling
Yeonhee Lee, Korea Institute of Science and Technology, Republic of Korea, J. Lee, Korea University, W.C. Lim, Korea Institute of Science and Technology, K. Shin, Sogang University, Korea, K.-J. Kim, Korea University
AS-TuP12
Analysis of Passivated Surfaces for Mass Spectrometer Inlet Systems by Auger Electron and X-Ray Photoelectron Spectroscopy
Henry Ajo, D.W. Blankenship, E.A. Clark, Savannah River National Laboratory
AS-TuP13
Surface Characterization of Gunshot Residue (GSR) by X-ray Photoelectron Spectroscopy (XPS) and High Resolution Electron Microscopy
A.J. Schwoeble, RJ Lee Group, Inc., Brian Strohmeier, Thermo Fisher Scientific, K.L. Bunker, D.R. McAllister, J.P. Marquis, Jr.,, J.D. Piasecki, N.M. McAllister, RJ Lee Group, Inc., W. Sgammato, Thermo Fisher Scientific
AS-TuP14
Analysis of Graphene and Other Graphitic Materials using XPS and AES
Harry Meyer III, Oak Ridge National Laboratory
AS-TuP15
Investigation of Precious-Metal/Metal-Oxide-Support Interactions in Automotive Catalytic Converters using a Pd/ Ce0.7Zr0.3O2 Model Planar Catalyst System
Obiefune Ezekoye, University of Michigan, M.I. Nandasiri, Western Michigan University, T. Varga, P. Nachimuthu, W. Jiang, S.V.N.T. Kuchibhatla, S. Thevuthasan, Pacific Northwest National Laboratory, X. Pan, G.W. Graham, University of Michigan
AS-TuP17
Cleaning and Characterization of InP Surface using Atomic Hydrogen and STM
W. Melitz, J. Shen, Tyler Kent, University of California San Diego, R. Droopad, Texas State University, P.K. Hurley, Tyndall National Institute, A.C. Kummel, University of California San Diego
AS-TuP18
Highly Selective and Low Damage Etching of GaAs/ AlGaAs Heterostructure using Cl2/ O2 Neutral Beam
JongSik Oh, K.S. Min, C.K. Kim, G.Y. Yeom, Sungkyunkwan University, Korea
AS-TuP19
TiO2 Nanotube Growth Mechanism Studied with Scanning Auger Spectroscopy
Dennis Paul, Physical Electronics, S. Berger, F. Schmidt-Stein, S.P. Albu, H. Hildebrand, P. Schmuki, University of Erlangen-Nürnberg, Germany, J.S. Hammond, Physical Electronics
AS-TuP20
Effect of Annealing TiN/Al2O3 Nanofilms Grown on InGaAs
Oscar Ceballos-Sanchez, A. Sanchez-Martinez, M.O. Vazquez-Lepe, CINVESTAV-Unidad Queretaro, Mexico, P. Lysaght, SEMATECH, A. Herrera-Gomez, CINVESTAV-Unidad Queretaro, Mexico
AS-TuP21
Comparison between the Continuous and Discrete Model to Assess the Thickness of SiO2 Layers on Si with XPS Data
Milton Vazquez-Lepe, P.G. Mani-Gonzalez, A. Mendoza-Galvan, A. Herrera-Gomez, Cinvestav Queretaro Mexico
AS-TuP22
Electrical and Surface Studies of the High-k Gate Dielectrics Al2O3, HfO2, and AlxHfyOz on Silicon via Atomic Layer Deposition
S. Hogan, G. Hernandez, R. Candler, S. Franz, YouSheng (Wilson) Lin, UCLA
AS-TuP23
Enhanced Green Emission from UV Down-Converting Ce3+- Tb3+ Co-Activated ZnAl2O4 Phosphor
K.G. Tshabalala, University of the Free State, South Africa, S. Cho, J. Park, Korea Institute of Science and Technology, Republic of Korea, H.C. Swart, Odireleng Ntwaeaborwa, University of the Free State, South Africa
AS-TuP24
Characterization of AlxGa1-xN Thin Film Light Emitting Diode (LED) Device by Spectroscopic Ellipsometry
K. Uppireddi, Li Yan, HORIBA Scientific