AVS 58th Annual International Symposium and Exhibition | |
Applied Surface Science Division | Tuesday Sessions |
Session AS-TuP |
Session: | Applied Surface Science Poster Session |
Presenter: | Vincent S. Smentkowski, GE-GRC |
Authors: | V.S. Smentkowski, GE-GRC D. Ellis, GE-GRC |
Correspondent: | Click to Email |
Focused Ion Beam (FIB) techniques are widely used in order to generate cross sections of samples which can then be analyzed using a variety of analytical instrumentation in order to obtain microstructural information. In order to rapidly generate FIB cross sections, small areas (typically 5 to 10 microns) are milled. Time of Flight Secondary Ion Mass Spectrometry (ToF-SIMS) is a powerful surface analytical technique that is able to measure low concentrations of sub surface species. ToF-SIMS depth profile measurements are collected by eroding a large area (50 to 1,000 microns in size) of a sample using an ion beam for a certain amount of time, pausing the erosion, analyzing a smaller (central) region of the eroded area, and repeating the cycle until the desire depth has been reached. Ion images are often recorded at each depth and a full mass spectrum is saved at every volume element allowing for 3 D analysis. Often times, both ToF-SIMS depth profile analysis and high resolution microstructural SEM characterization are required on the same sample. Ideally, these complimentary analyses would be performed in the same region of a sample. In this presentation, we will demonstrate that FIB techniques can be used to clean up the large area craters produced by ToF-SIMS depth profile analysis thereby enabling microstructural characterization over larger areas of samples.
Advantages of this approach are: larger FIB cross sections can be prepared since a significant amount of material was removed during the erosion cycles in the ToF-SIMS analysis, combining the chemical information provided from the ToF-SIMS analysis with the large area microstructural characterization provided by FIB-SEM analysis, and having both the ToF-SIMS and the large area cross sectional analysis performed in the same region of the sample. The ToF-SIMS depth profile craters have a slope of about 45 deg (the ion column is positioned at an angle of 45 deg from the sample normal), and hence an advantage of performing the FIB clean up at this angle is the enhancement in the layer thickness that will be available for microstructural analysis.