| AVS 58th Annual International Symposium and Exhibition | |
| Applied Surface Science Division | Tuesday Sessions |
| Session AS-TuP |
| Session: | Applied Surface Science Poster Session |
| Presenter: | JongSik Oh, Sungkyunkwan University, Korea |
| Authors: | J.S. Oh, Sungkyunkwan University, Korea K.S. Min, Sungkyunkwan University, Korea C.K. Kim, Sungkyunkwan University, Korea G.Y. Yeom, Sungkyunkwan University, Korea |
| Correspondent: | Click to Email |
Highly selective and low damage etching of the GaAs cap layer on AlGaAs is essential in fabricating devices such as heterojuction superlattices, field effect transistors, injection lasers, and solar cells, etc. The GaAs on AlGaAs was etched using a low energy Cl2/O2 neutral beam and the schottky device characteristics fabricated on the exposed AlGaAs were compared with those fabricated after the etching using wet etching and a Cl2/O2 ion beam. The wet etching was conducted by a mixture of H2O2 and H3PO4. For the Cl2/O2 neutral beam etching, a neutral beam system composed of three-grid inductively coupled plasma (ICP)-type ion gun and a reflector installed just in front of the ion gun was used. Using a low energy Cl2/O2 ion beam or a Cl2/O2 neutral beam, highly selective etching of the GaAs cap layer to AlGaAs similar to wet etching could be achieved through the formation of Al2O3 on the exposed AlGaAs during the etching. When the electrical characteristics of the schottky devices were compared, the devices fabricated after the etching using the neutral beam showed the best electrical characteristics such as electrical stability, low leakage current, higher barrier height, etc. by showing low damage to the exposed AlGaAs surface.