AVS 57th International Symposium & Exhibition
    Plasma Science and Technology Wednesday Sessions

Session PS-WeM
Plasma Surface Interactions (Fundamentals & Applications) I

Wednesday, October 20, 2010, 8:00 am, Room Aztec
Moderator: M. Hori, Nagoya University, Japan


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Click a paper to see the details. Presenters are shown in bold type.

8:00am PS-WeM1
On the Mechanism of Plasma Surface Interactions in Electron Beam-Generated Plasma in Nitrogen Environment
E.H. Lock, S.G. Walton, R.F. Fernsler, Naval Research Laboratory
8:20am PS-WeM2
Breakthrough of Compatibility between Bowing-free Profile and Bottom CD in High Aspect Ratio Dielectric Etch Using DC Superimposed Capacitively-Coupled Plasma
A. Nakagawa, H. Mochiki, M. Dojun, K. Yatsuda, S. Okamoto, Tokyo Electron AT Limited, Japan
8:40am PS-WeM3
High Resolution Cryogenic Silicon Etch Process Development for Nanoscale Trenches
Y. Wu, Oxford Instruments, Lawrence Berkeley National Laboratory, D. Olynick, Lawrence Berkeley National Laboratory, A. Goodyear, Oxford Instruments, C. Peroz, Abeam Technologies, S. Dhuey, X. Liang, S. Cabrini, Lawrence Berkeley National Laboratory
9:00am PS-WeM4
Quantitative Analysis and Modeling of Dry Etch Induced Physical Damage in Si Surface Layer
J.H. Yoon, W.S. Kim, J.W. Han, D.H. Kim, J.Y. Lee, K.S. Shin, C.J. Kang, Samsung Electronics, Republic of Korea
9:20am PS-WeM5
On the Role of CF in Fluorocarbon Plasmas: Gas-Phase Reactions and Surface Interactions
M.F. Cuddy, E.R. Fisher, Colorado State University
9:40am PS-WeM6
"Designer" Ion Energy Distributions on Substrates Immersed in a Plasma
P. Diomede, D.J. Economou, V.M. Donnelly, University of Houston
10:40am PS-WeM9 Invited Paper
Modeling of Plasma-Induced Damage and Its Impacts on Parameter Variations in Advanced Electronic Devices
K. Eriguchi, Kyoto University, Japan
11:20am PS-WeM11
Time Resolved Diagnostics of a Pulsed Dual-Source Inductively Coupled Plasma
H. Shin, W. Zhu, X. Lin, V.M. Donnelly, D.J. Economou, University of Houston
11:40am PS-WeM12
Investigations on Physical Processes for Low Temperature Plasma Activated Wafer Bonding
T. Plach, K.H. Hingerl, University of Linz, Austria, D.V. Dragoi, G.M. Mittendorfer, W.M. Wimplinger, EV Group, Austria