| AVS 56th International Symposium & Exhibition | |
| Plasma Science and Technology | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | PS1-TuM1 Invited Paper Inductively-Coupled Pulsed Plasmas in the Presence of Synchronous Pulsed Substrate Bias for Advanced Gate Etching S. Banna, Applied Materials Inc., K. Tokashiki, Samsung Elect. Co. Ltd., A. Agarwal, Applied Materials Inc., J.Y. Lee, Samsung Elect. Co. Ltd., V. Todorow, Applied Materials Inc., J.H. Yoon, Samsung Elect. Co. Ltd., S. Rauf, Applied Materials Inc., K. Shin, Samsung Elect. Co. Ltd., K. Ramaswamy, P.J. Stout, D. Lymberopoulos, K. Collins, Applied Materials Inc. |
| 8:40am | PS1-TuM3 Synchronously Pulsed Capacitively Coupled Plasma Sources for Dielectric Etching A. Agarwal, P.J. Stout, S. Rauf, K. Collins, Applied Materials Inc. |
| 9:00am | PS1-TuM4 Highly Selective and Low Damage Etching of TiN / HfO2 Layer Gate Stack Structure using Neutral Beam Etching and Atomic Layer Etching B.J. Park, J.B. Park, TH. Min, J.K. Yeon, S.K. Kang, W.S. Lim, G.Y. Yeom, SungKyunKwan University, South Korea, K.S. Min, University of Texas, Austin |
| 9:20am | PS1-TuM5 Impact of Cure and Trim Processes on the Linewidth Roughness Transfer during Gate Stack Patterning with Amorphous Carbon Mask L. Azarnouche, STMicroelectronics, France, E. Pargon, M. Martin, O. Luere, K. Menguelti, CNRS/LTM, France, P. Gouraud, C. Verove, STMicroelectronics, France, O. Joubert, CNRS/LTM, France |
| 9:40am | PS1-TuM6 Multilayer Mask Etch - CD, CD Bias, and Profile Control using RLSA Plasma Etcher H. Kintaka, T. Mori, TEL Technology Center, America, LLC USA, M. Sasaki, T. Nozawa, Tokyo Electron Technology Development Institute, Inc. Japan |
| 10:40am | PS1-TuM9 Effects of Hydrogen Bombardment during Polysilicon Gate Etching by HBr/O2 Plasmas T. Ito, K. Karahashi, Osaka University, Japan, M. Fukasawa, S. Kobayashi, N. Kuboi, T. Tatsumi, Sony Corporation, S. Hamaguchi, Osaka University, Japan |
| 11:00am | PS1-TuM10 Challenges in Etching sub-45nm Shallow Trench Isolation (STI) A. Paterson, T. Panagopoulos, S. Sriraman, A. Sato, N. Benjamin, N. Williams, C. Lee, Y. Yamaguchi-Adams, A. Eppler, L. Braly, T. Kim, H. Singh, V. Vahedi, Lam Research |
| 11:20am | PS1-TuM11 Control of TiN Sheet Resistance in Downstream Plasma PR Strip V. Vaniapura, L. Diao, S. Xu, Mattson Technology, Inc. |
| 11:40am | PS1-TuM12 Inductively Coupled Plasma Etching of GaN and Induced Defects J. Ladroue, GREMI - STMicroelectronics, France, A. Meritan, M. Boufnichel, STMicroelectronics, France, P. Lefaucheux, P. Ranson, R. Dussart, GREMI, France |