AVS 56th International Symposium & Exhibition | |
Plasma Science and Technology | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
PS-TuP1 Extension of Aluminum Etch using a Carbon Mask for High Aspect Ratio 70nm Al Etch with a Chlorine Based Chemistry G. Ding, B. Schwarz, C. Lee, Applied Materials, Inc |
PS-TuP2 A Study on the Etching Characteristics of Magnetic Tunnel Junction Films for Spin Transfer Torque MRAM M.S. Lee, KAIST, Republic of Korea, J.Y. Moon, S.H. Cho, J.K. Jung, S.K. Lee, H.S. Kim, S.K. Park, Hynix Semicon., Republic of Korea, W.J. Lee, KAIST, Republic of Korea |
PS-TuP3 Interactions of Plasma with Dielectrics during Ultra Low-k Dual Damascene Etch Y. Zhou, R. Patz, A. Darlak, K. Zhou, J. Pender, Applied Materials, Inc., C. Labelle, GLOBALFOUNDRIES, D. Horak, IBM Research |
PS-TuP4 Highly Selective Etching of Silicon Nitride to CVD a-C in Dual-Frequency Capacitively Coupled CH2F2/H2 Plasmas J.S. Kim, N.-E. Lee, Sungkyunkwan University, Korea |
PS-TuP5 Infinitely High Selective Etching of ITO Binary Mask Structure for Extreme Ultraviolet Lithography (EUVL) Y.R. Park, N.-E. Lee, Sungkyunkwan University, Korea |
PS-TuP6 Improvement of Surface Roughness in SOI Wafer Fabrication using Cl2-based Neutral Beam Etching TH. Min, J.K. Yeon, B.J. Park, S.K. Kang, W.S. Lim, G.Y. Yeom, Sungkyunkwan University, Korea |
PS-TuP7 In-situ Evaluation of Ashing Plasma Damages on Porous SiOCH Films Due to Ions, Radicals, and Radiation H. Yamamoto, K. Takeda, M. Sekine, M. Hori, Nagoya University, Japan, T. Kaminatsui, K. Yamamoto, H. Hayashi, I. Sakai, T. Ohiwa, Toshiba Corporation Semiconductor Company, Japan |
PS-TuP9 Origin of Electrical Changes Occurring at Plasma Etching Endpoints M.A. Sobolewski, D.L. Lahr, National Institute of Standards and Technology |
PS-TuP10 Optimization of Precursor Injection in an Atmospheric Pressure Plasma Jet System F.J.J. Peeters, Eindhoven University of Technology, The Netherlands, R. Dams, R. Rego, M. Dubreuil, D. Vangeneugden, Flemish Institute for Technological Research (VITO), Belgium, M. Creatore, M.C.M. van de Sanden, Eindhoven University of Technology, The Netherlands |
PS-TuP11 Plasma Etching of SiO2 Using a Pin-To-Plate Dielectric Barrier Discharge in Atmospheric Pressure J.S. Oh, J.B. Park, E.L. Gil, G.Y. Yeom, Sungkyunkwan University, Republic of Korea |
PS-TuP12 Diagnostic Study of Microplasmas in Contact with Saline Solution H.W. Chang, A.H. Hsieh, C.L. Chen, C.C. Hsu, National Taiwan University, Taiwan |
PS-TuP13 Synthesis of Niobium Oxide Nanowires Using an Atmospheric Pressure Plasma Jet Y. Lin, C.C. Hsu, National Taiwan University, Taiwan |
PS-TuP14 Study of an Atmospheric Pressure, Pulsed Arc Plasma Jet: Downstream Characterization and its Application to Thin Film Deposition Y.W. Hsu, Y.J. Yang, C.C. Hsu, National Taiwan University, Taiwan |
PS-TuP15 Amorphous Silicon Etching Using Atmospheric-Pressure Dielectric Barrier Discharge (APDBD) Plasma H.C. Kwon, G.H. Kim, Seoul National University, Korea, S.H. Lee, Korea Institute of Materials Science, Korea, T.H. Noh, National Fusion Research Institute, Korea, S.I. Choi, S.G. Kim, S.K. Lim, Samsung Electronics Co. Ltd, Korea |
PS-TuP16 Poly(ethylene glycol) Films Deposited by Atmospheric Pressure Plasma Liquid Deposition and Atmospheric Pressure Plasma-Enhanced Chemical Vapour Deposition : Synthesis of Non-Fouling Surfaces B. Nisol, Université Libre de Bruxelles, Belgium, C. Poleunis, P. Bertrand, Université Catholique de Louvain, Belgium, F. Reniers, Université Libre de Bruxelles, Belgium |
PS-TuP17 High Refractive Index Polymeric Optical Coatings by Plasma Polymerization L.D. Hyde, H.J. Griesser, Ian Wark Research Institute, Australia |
PS-TuP18 HfSiON Growth from Hf Metal/SiO2/Si(100) Stack with Nitrogen VHF-ICP Exposure R. Kage, T. Kitajima, T. Nakano, National Defense Academy, Japan, T. Makabe, Keio University, Japan |
PS-TuP19 Plasma Characterization of an Unbalanced Magnetron Sputter Deposition System K. Pollock, J. Hiltrop, J. Doyle, Macalester College |
PS-TuP20 Deposition Profile of Carbon Films in Submicron Wide Trenches using H-assisted Plasma CVD T. Nomura, J. Umetsu, Y. Korenaga, H. Matsuzaki, Kyushu University, Japan, K. Koga, M. Shiratani, Kyushu University, and JST, CREST, Japan, Y. Setsuhara, Osaka University, and JST, CREST, Japan, M. Sekine, M. Hori, Nagoya University, and JST, CREST, Japan |
PS-TuP21 Carbon Particle Formation Due to Interaction between Graphite and Helicon Plasmas M. Shiratani, S. Iwashita, H. Miyata, K. Koga, Kyushu University, Japan |