| AVS 53rd International Symposium | |
| Plasma Science and Technology | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | PS2-ThA1 Invited Paper A Generic Framework of Surface Kinetics Modeling for Plasma-Surface Interactions H.H. Sawin, B. Bai, Massachusetts Institute of Technology |
| 2:40pm | PS2-ThA3 Modeling of Roughness Evolution and Instability during Si Plasma Etching P. Angelikopoulos, V. Constantoudis, G. Kokkoris, G. Mpoulousis, P. Xidi, E. Gogolides, Institute of Microelectronics, NCSR "Demokritos", Greece |
| 3:00pm | PS2-ThA4 C@sub 4@F@sub 6@/Ar Plasma Modeling by using Feature Simulation and Elementary Reaction Analysis Y. Shimogaki, H. Watanabe, The University of Tokyo, Japan, Y. Egashira, Osaka University, Japan, S.-Y. Kang, I. Sawada, Tokyo Electron Limited, Japan |
| 3:20pm | PS2-ThA5 Dry Process under Competition Among Charging, Etching, and Deposition T. Makabe, T. Shimada, T. Yagisawa, Keio University, Japan |
| 3:40pm | PS2-ThA6 Edge Effects in Reactive Ion Etching: The Wafer- Focus Ring Gap* N.Y. Babaeva, M.J. Kushner, Iowa State University |
| 4:00pm | PS2-ThA7 Development of High Aspect Ratio, Selective Si Etch Model in CCP Halogen Plasma D. Fischer, W. Jacobs, A. Kersch, W. Sabisch, Qimonda AG, Munich, Germany, S. Barth, A. Henke, Qimonda AG, Dresden, Germany, J. Sobe, Qimonda AG, Munich, Germany, A. Steinbach, Qimonda AG, Dresden, Germany, S. Wege, Qimonda AG, Munich, Germany, M. Reinicke, Dresden University of Technology, Germany |
| 4:20pm | PS2-ThA8 Global Model of a Dual Frequency Capacitive Discharge P. Levif, P. Chabert, Ecole Polytechnique, France, M.M. Turner, Dublin City University, Ireland |
| 4:40pm | PS2-ThA9 Particle-in-Cell Simulation of Beam Extraction Through Grid Holes with Application to Neutral Beam Sources S.K. Nam, D.J. Economou, V.M. Donnelly, University of Houston |