AVS 53rd International Symposium
    Plasma Science and Technology Thursday Sessions
       Session PS2-ThA

Paper PS2-ThA5
Dry Process under Competition Among Charging, Etching, and Deposition

Thursday, November 16, 2006, 3:20 pm, Room 2011

Session: Plasma Modeling
Presenter: T. Makabe, Keio University, Japan
Authors: T. Makabe, Keio University, Japan
T. Shimada, Keio University, Japan
T. Yagisawa, Keio University, Japan
Correspondent: Click to Email
Dry etching is a highly selective technique for functions of positive ions, electrons, neutral radicals, and photons produced by low temperature plasmas. In particular, dielectric etching is a competitive process among charging, etching and deposition at each of local positions of a geometrical structure exposed to reactive plasmas. Even on a dielectric surface, a wall may have a finite conductivity under photo irradiation from plasmas. Plasma etching is adjacent to the damage, such as charging, thermal, irradiation, caused by these elements. In this work we have performed the feature profile simulation of a trench on SiO@sub 2@ and organic low-k by considering the competition among charging, etching and deposition. The effective etch-yield of SiO@sub 2@ exposed to fluorocarbon plasmas is available from a beam experiment and etch rate observation. The sheath area adjacent to the patterned surface is, in principle, subject to distortion by the local charging in the inside of the trench. Undisturbed radial plane from the surface is automatically prepared. A time-averaged 2D plasma structure in a two-frequency CCP reactor of several cm in dimension is connected to the wafer surface having a pattern of a size of sub-micron. The influence of the charging and/or deposition on the etching of SiO@sub 2@ and organic low-k is numerically discussed in term of the feature profile evolution. Also the effect of the surface conductivity on the feature profile is investigated.