AVS 53rd International Symposium
    Plasma Science and Technology Thursday Sessions
       Session PS2-ThA

Paper PS2-ThA4
C@sub 4@F@sub 6@/Ar Plasma Modeling by using Feature Simulation and Elementary Reaction Analysis

Thursday, November 16, 2006, 3:00 pm, Room 2011

Session: Plasma Modeling
Presenter: Y. Shimogaki, The University of Tokyo, Japan
Authors: Y. Shimogaki, The University of Tokyo, Japan
H. Watanabe, The University of Tokyo, Japan
Y. Egashira, Osaka University, Japan
S.-Y. Kang, Tokyo Electron Limited, Japan
I. Sawada, Tokyo Electron Limited, Japan
Correspondent: Click to Email
C@sub 4@F@sub 6@ is an attractive fluoro-carbon gas to replace commonly used C@sub 4@F@sub 8@, because of the much lower global warming potential (GWP) compared to C@sub 4@F@sub 8@. We have examined the deposition kinetics of a-C:F film from C@sub 4@F@sub 6@ plasma in a CCP reactor, assuming that the reactor is a completely stirred tank reactor (CSTR). The residence time dependency of deposition rate and chemical species analysis using appearance mass spectroscopy (AMS) revealed that main deposition species may be an activated C@sub 4@F@sub 6@. Elementary reaction analysis also confirms this reaction model. Feature profile simulation on the deposition profile within an over-hang test structure suggests that ionic species are contributing to initiate deposition reactions.