| AVS 53rd International Symposium | |
| Plasma Science and Technology | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| PS1-TuP1 Influence of Redeposition on the Plasma Etching Dynamics L. Stafford, University of Florida, J. Margot, Université de Montréal, Canada, S. Delprat, M. Chaker, INRS-Energie, Matériaux et Télécommunications, Canada, S.J. Pearton, University of Florida |
| PS1-TuP2 Damage Recovery of (Bi@sub4-x@La@subx@)Ti@sub3@O@sub12@ Thin Films during the Etch Process using Inductively Coupled Plasma Sources J.G. Kim, G.H. Kim, K.T. Kim, C.I. Kim, Chung-Ang University, Korea |
| PS1-TuP5 Etch Characteristics of Na@sub 0.5@K@sub 0.5@NbO@sub 3@ Thin Films using Cl@sub 2@/BCl@sub 3@/Ar Inductively Coupled Plasma C.M. Kang, K.T. Kim, G.H. Kim, C.I. Kim, Chung-Ang University, Korea |
| PS1-TuP7 The Etching Characteristics of High-K Dielectric Materials using the Neutral Beam Etching System K.S. Min, B.J Park, C.K. Oh, S.D. Park, J.W. Bae, G.Y. Yeom, Sungkyunkwan University, Korea |
| PS1-TuP8 Selective Etching of Titanium Nitride D.J. Wu, E.J. Karwacki, Air Products and Chemicals, Inc. |
| PS1-TuP9 Improvement of External Efficiency using Surface Roughening Technique in the GaN-Based Light Emitting Diodes H.C. Lee, J.B. Park, J.W. Bae, G.Y. Yeom, Sungkyunkwan University, Korea |