AVS 53rd International Symposium
    Plasma Science and Technology Tuesday Sessions
       Session PS1-TuP

Paper PS1-TuP7
The Etching Characteristics of High-K Dielectric Materials using the Neutral Beam Etching System

Tuesday, November 14, 2006, 6:00 pm, Room 3rd Floor Lobby

Session: Etching of High-K, Compound Semiconductors and Advanced Materials Poster Session
Presenter: K.S. Min, Sungkyunkwan University, Korea
Authors: K.S. Min, Sungkyunkwan University, Korea
B.J Park, Sungkyunkwan University, Korea
C.K. Oh, Sungkyunkwan University, Korea
S.D. Park, Sungkyunkwan University, Korea
J.W. Bae, Sungkyunkwan University, Korea
G.Y. Yeom, Sungkyunkwan University, Korea
Correspondent: Click to Email
High-k dielectric materials are attractive as a gate dielectric for MOSFETs device because they have wide band gap, superior thermal stability, and low-leakage-current. However, the integration of the high-k dielectric materials is one of the important issues in scaling MOSFET device for the critical dimensions below 50nm. In this study, the etching characteristics of high-k dielectric materials (HfO@sub 2@, Ta@sub 2@O@sub 5@) were studied using a reactive neutral beam. The energetic reactive neutral beam used in this study was formed by reflecting the reactive ions on a planar reflector at a low angle extracted by a reactive ion gun. The etch rate and selectivity between Si and high-k dielectric materials were investigated as a function of reactive gas mixture ratio. Also, the changes in the surface stoichiometry of high-k dielectric materials were measured using an angle resolved X-ray photoelectron spectroscopy (ARXPS) and compared with the surface stoichiometry of the high-k materials etched by inductively coupled plasma etching. ARXPS data showed that the changes in the surface composition of high-k dielectric materials by the neutral beam etching were significantly less compared to those by conventional inductively coupled plasma etching.