| AVS 53rd International Symposium | |
| Plasma Science and Technology | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | PS1-ThA1 Mechanisms and Selectivity for Etching of HfO@sub 2@ and Si in BCl@sub 3@ Plasmas C. Wang, V.M. Donnelly, University of Houston |
| 2:20pm | PS1-ThA2 Plasma Etching of HfO2 in High-Density Chlorine-Containing Plasmas without RF Biasing K. Nakamura, K. Osari, D. Hamada, K. Eriguchi, K. Ono, Kyoto University, Japan |
| 2:40pm | PS1-ThA3 Effects of Low Energy Nitrogen Plasma on the Removal of HfSiON W.S. Hwang, National University of Singapore, W.J. Yoo, Sungkyunkwan University, Korea, B.J. Cho, D.S.H. Chan, National University of Singapore |
| 3:00pm | PS1-ThA4 Vacuum-Ultraviolet Induced Photocurrents in Plasma-Charged, Atomic Layer Deposited, HfO2/SiO2/Si Dielectric Stacks* G.S. Upadhyaya, J.L. Shohet, University of Wisconsin-Madison |
| 3:20pm | PS1-ThA5 Mechanisms of Plasma-Induced Damage during Ion-Assisted Chemical Etching of Indium-Zinc-Oxide Films in Reactive Plasma Chemistries L. Stafford, W.T. Lim, S.J. Pearton, University of Florida, J.-I. Song, J.-S. Park, Y.W. Heo, J.-H. Lee, J.-J. Kim, Kyungpook National University, Korea |
| 3:40pm | PS1-ThA6 Invited Paper Reactive Plasma for High Aspect Ratio Etching and Surface Modification S.W. Pang, The University of Michigan |
| 4:20pm | PS1-ThA8 Atomic Layer Etching of III-V compounds using a Low Angle Forward Reflected Neutral Beam S.D. Park, C.K. Oh, J.W. Bae, G.Y. Yeom, Sungkyunkwan University, Korea |
| 4:40pm | PS1-ThA9 Improvement of Programming Characteristics of Ge2Sb2Te5 Thin Films by Incorporating SiO2 for Application of PcRAM S.W. Ryu, J.H. Oh, B.J. Choi, Seoul National University, Korea, S.K. Hong, Hynix Semiconductor Inc., Korea, C.S. Hwang, H.J. Kim, Seoul National University, Korea |