| AVS 53rd International Symposium | |
| Plasma Science and Technology | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | PS1-MoM1 Invited Paper Fluorocarbon-based Plasma Etching Processes for Silicon Dioxide and Silica Dielectrics - Mechanistic Insights and Current Issues G.S. Oehrlein, University of Maryland |
| 8:40am | PS1-MoM3 Effect of Species Density and Ion Bombardment during Ashing of Extreme Ultra Low-@kappa@ (eULK) Inter-Level-Dielectric (ILD) Materials M.A. Worsley, Stanford University, N.C.M. Fuller, IBM Research Division, S.F. Bent, Stanford University, T. Dalton, IBM Research Division |
| 9:00am | PS1-MoM4 Systematical Evaluation of Etching Damage of Light, Radicals and Ions on Low-k Porous SiOCH Films S. Takashima, S. Uchida, M. Hori, Nagoya University, Japan, K. Oshima, K. Nagahata, T. Tatsumi, Sony Corporation, Japan |
| 9:20am | PS1-MoM5 Negative Ions in Dual-Frequency Capacitively Coupled Fluorocarbon Plasmas G.A. Curley, Ecole Polytechnique, France, J.P. Booth, Lam Research Corporation, D. Mari@aa c@, Ecole Polytechnique, France, C.S. Corr, Australian National University, J. Guillon, Ecole Polytechnique, France |
| 9:40am | PS1-MoM6 Plasma and Etching Characteristics for C@sub 6@F@sub 6@ Gas S.C. Park, H.S. Shin, J.W. Sun, C. Shin, C.-J. Kang, H. Cho, J.-T. Moon, Samsung Electronics, Korea, M.S. Kim, B. Ji, W.J. Howard, Air Products and Chemicals, Inc. |
| 10:20am | PS1-MoM8 New Challenges in Etching Ultra Low-k Dielectrics for 45nm and Beyond A. Li, K. Zhou, Y. Zhou, R. Cheung, S. Parikh, M. Armacost, Applied Materials, Inc. |
| 10:40am | PS1-MoM9 Analysis of Plasma-Induced Modification of Porous SiOCH Low-k Materials during Etching and Post-Etching Plasma Processes K. Kurihara, H. Hayashi, T. Ohiwa, Toshiba Corporation, Japan |
| 11:00am | PS1-MoM10 Material Modifications and Surface Roughness during Porous SiOCH Etching Processes F. Bailly, CNRS-IMN-France, T. David, CEA-LETI-France, A. Jacquier, STM-France, M. Darnon, CNRS-LTM-France, C. Cardinaud, CNRS-IMN-France |
| 11:20am | PS1-MoM11 Grain Size Effects on Plasma-based Copper Etch Process G. Liu, Y. Kuo, Texas A&M University |