| AVS 53rd International Symposium | |
| Plasma Science and Technology | Friday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | PS1-FrM1 Subplantation and Interface Modification during Ion Assisted Low-Pressure Plasma Deposition of Oxides at the RF-Biased Electrode A. Amassian, Cornell University, P. Desjardins, L. Martinu, Ecole Polytechnique de Montreal, Canada |
| 8:20am | PS1-FrM2 Process Performance of H@sub 2@ Remote Plasma Based Photoresist Ashing Processes and Their Influence on ULK Materials Modifications M.S. Kuo, G.S. Gottlieb, University of Maryland at College Park, P. Jiang, Texas Instruments, P. Lazzeri, M. Bersani, S. Pederzoli, M. Anderle, ITC-irst, Center for Scientific and Technological Research, Italy |
| 8:40am | PS1-FrM3 Measurement of Etching Kinetics and Surface Roughening of SiO2 and Coral Films during Plasma Etching Y. Yin, H.H. Sawin, Massachusetts Institute of Technology |
| 9:00am | PS1-FrM4 Spectroscopic Studies of Ammonia Plasmas S.J. Kang, V.M. Donnelly, University of Houston |
| 9:20am | PS1-FrM5 Study of Downstream NH@sub 3@ Plasma Damage to Low k Dielectrics J. Bao, H. Shi, J. Liu, P.S. Ho, The University of Texas at Austin |
| 9:40am | PS1-FrM6 Investigation of the Plasma-Activated Catalytic Formation of Ammonia in N@sub 2@ - H@sub 2@ Plasma J.H. van Helden, P.J. van den Oever, W.M.M. Kessels, M.C.M. Van De Sanden, D.C. Schram, R. Engeln, Eindhoven University of Technology, The Netherlands |
| 10:00am | PS1-FrM7 Transient Differential Charging of High Aspect Ratio Dielectric Features J.A. Kenney, G.S. Hwang, University of Texas at Austin |
| 10:20am | PS1-FrM8 On-wafer Monitoring of Charge Accumulation during Plasma Etching Processes B. Jinnai, Tohoku University, Japan, T. Orita, M. Konishi, J. Hashimoto, STARC, Japan, S. Samukawa, Tohoku University, Japan |
| 10:40am | PS1-FrM9 An In-situ Diagnostic to Detect Charging During Plasma Etching E. Ritz, D. Ruzic, University of Illinois at Urbana-Champaign |
| 11:00am | PS1-FrM10 Reduction of UV Irradiation Damage in CCD Image Sensor using CF@sub 3@I Gas Plasma Y. Ichihashi, Tohoku University and Sanyo Electric Co., Ltd., Japan, Y. Ishikawa, Tohoku University, Japan, R. Shimizu, H. Mizuhara, M. Okigawa, Sanyo Electric Co., Ltd, Japan, S. Samukawa, Tohoku University, Japan |
| 11:20am | PS1-FrM11 Defect Generation due to UV Radiation in Plasma Etching Process Y. Ishikawa, Tohoku University, Japan, A. Uedono, Tsukuba University, Japan, S. Yamasaki, National Institute of Advanced Industrial Science and Technology, Japan, S. Samukawa, Tohoku University, Japan |
| 11:40am | PS1-FrM12 Evaluation of Sticking Probability of Ti Atoms in Sputtering Deposition N. Nafarizal, K. Sasaki, Nagoya University, Japan |