| AVS 53rd International Symposium | |
| Electronic Materials and Processing | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | EM2-ThA1 Invited Paper Ab Initio Study of High-k Gate Stack J. Ha, B. Magyari-Kope, P.C. McIntyre, Stanford University, K. Cho, UT Dallas |
| 2:40pm | EM2-ThA3 Material and Electrical Properties of HfRuN Gate Electrodes on HfO@sub 2@ M. Sawkar Mathur, J.P. Chang, University of California, Los Angeles |
| 3:00pm | EM2-ThA4 Spectroscopic Detection of Electronically Active Defects in Nanocrystalline Ti/Zr/Hf Elemental Oxides G. Lucovsky, L.B. Fleming, M.D. Ulrich, H. Seo, N.A. Stoute, NC State University, J. Luning, Stanford Synchrotron Radiation Lab |
| 3:20pm | EM2-ThA5 Invited Paper Combining Ferroelectric Oxides and Semiconductors for Smart Transistors J. Singh, University of Michigan |
| 4:00pm | EM2-ThA7 Theoretical Analysis of the Interface between Zr(Hf)O@sub 2@ and Ge(100) for Ge-based MOSFET Devices T.J. Grassman, S.R. Bishop, A.C. Kummel, University of California, San Diego |
| 4:20pm | EM2-ThA8 Sub-1 nm Equivalent Oxide Thickness Zirconium Doped Hafnium Oxide High-k Gate Dielectrics J. Yan, C.-H. Lin, A. Birge, J. Lu, Y. Kuo, Texas A&M University |
| 4:40pm | EM2-ThA9 Evaluation of Various Ru-insulator-Ru Capacitors with CVD-Ru Thin Films for Both Top and Bottom Electrodes B.S. Kim, C.S. Hwang, H.J. Kim, Seoul National University, Korea, S.Y. Kang, J.Y. Kim, K.H. Lee, H.J. Lim, C.Y. Yoo, S.T. Kim, Samsung Electronics Co., Ltd., Korea |