AVS 53rd International Symposium
    Electronic Materials and Processing Thursday Sessions
       Session EM2-ThA

Paper EM2-ThA9
Evaluation of Various Ru-insulator-Ru Capacitors with CVD-Ru Thin Films for Both Top and Bottom Electrodes

Thursday, November 16, 2006, 4:40 pm, Room 2003

Session: Electronic Properties of High-k Dielectrics, Ferroelectrics, and Their Interfaces
Presenter: B.S. Kim, Seoul National University, Korea
Authors: B.S. Kim, Seoul National University, Korea
C.S. Hwang, Seoul National University, Korea
H.J. Kim, Seoul National University, Korea
S.Y. Kang, Samsung Electronics Co., Ltd., Korea
J.Y. Kim, Samsung Electronics Co., Ltd., Korea
K.H. Lee, Samsung Electronics Co., Ltd., Korea
H.J. Lim, Samsung Electronics Co., Ltd., Korea
C.Y. Yoo, Samsung Electronics Co., Ltd., Korea
S.T. Kim, Samsung Electronics Co., Ltd., Korea
Correspondent: Click to Email
Ruthenium has been considered as one of the most promising materials for capacitor electrodes in gigabit-scale DRAM due to its low electrical resistivity and good dry etching property in addition to the capability of conductive oxide formation. To deposit the Ru thin films into a typical concave type storage node with a high aspect ratio, the development of metalorganic chemical vapor deposition (MOCVD) process, which provides an excellent conformality, is necessarily required. However, there are few reports about the structural and electrical characterization of Ru-insulator-Ru (RIR) capacitors, of which both the top and bottom Ru films were grown by MOCVD. Therefore, in this study, we fabricated the RIR capacitors with CVD-Ru and various dielectric materials and evaluated their properties by structural and electrical analysis. The Ru thin films were deposited by hot-wall MOCVD using liquid precursor of (2,4-Demethylpentadienyl)(Ethylcyclopentadienyl)ruthenium (DER) to fabricate the top and bottom electrodes. All the dielectric thin films such as ZrO@sub 2@, TiO@sub 2@ and SrTiO@sub 3@ were formed by atomic layer deposition (ALD) method. The electrical properties of the fabricated RIR capacitors were evaluated by the capacitance-voltage measurement combined with the current-voltage measurement. The thermal stability of as-grown capacitors was also tested under several annealing ambient and temperatures. The structural analysis to elucidate the relation with electrical properties was conducted by the x-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM).