| 8:20am |
TF-TuM1
Atomic Layer Deposition of Titanium Oxide Thin Films using O@sub 3@ for MIM Capacitor of Next Generation Memory Devices
S.K. Kim, K.M. Kim, C.S. Hwang, Seoul National University, Korea |
| 8:40am |
TF-TuM2
Characteristics of Atomic Layer Deposited TiO@sub2@ Films and its Photocatalytic Activity
D.H. Kim, R. Pheamhom, Chonnam National University, South Korea |
| 9:00am |
TF-TuM3
Atomic Layer Deposition of SrTiO@sub 3@ Films Having a High Thickness- and Cation-Composition Conformality Over a Severe Contact Hole Structure
O.S. Kwon, S.W. Lee, C.S. Hwang, Seoul National University, Korea |
| 9:20am |
TF-TuM4
Selective Atomic Layer Deposition (ALD) for Fabrication of Metal and Oxide Nanotubes
J.Y. Kim, D. Jeong, S. Won, H. Shin, J. Lee, Kookmin University, Korea |
| 9:40am |
TF-TuM5
Laterally Graded Films and Multilayers Using Atomic Layer Deposition with a Slit Doser and Substrate Translation
F.H. Fabreguette, S.M. George, University of Colorado |
| 10:00am |
TF-TuM6
Coating Nanoparticles by Atomic Layer Deposition in a Rotary Fluidized Bed Reactor: Al@sub 2@O@sub 3@ ALD on ZrO@sub 2@
J.A. McCormick, A.W. Weimer, S.M. George, University of Colorado at Boulder |
| 10:20am |
TF-TuM7 Invited Paper
The Atomic-Layer-Deposited HfO@sub 2@ Gate Dielectric Films; Chemistry of Interface and Electrical Performances
T.J. Park, M.J. Cho, S.H. Hong, M.H. Seo, J.H. Kim, J.H. Park, C.S. Hwang, Seoul National University, Korea |
| 11:00am |
TF-TuM9
Atomic Layer Deposition for the Modification and Stabilization of Localized Surface Plasmon Resonance Nanosensors
J.W. Elam, M.J. Pellin, Argonne National Laboratory, A.V. Whitney, R.P. Van Duyne, P.C. Stair, G.C. Schatz, S. Zou, Northwestern University |
| 11:20am |
TF-TuM10
Atomic Layer Deposition (ALD) of Nickel Films Using Amidinate Precursors
V.R. Pallem, K. Kim, J.S. Park, R.G. Gordon, Harvard University |