AVS 52nd International Symposium
    Thin Films Tuesday Sessions
       Session TF-TuM

Paper TF-TuM10
Atomic Layer Deposition (ALD) of Nickel Films Using Amidinate Precursors

Tuesday, November 1, 2005, 11:20 am, Room 306

Session: Atomic Layer Deposition - Oxides
Presenter: V.R. Pallem, Harvard University
Authors: V.R. Pallem, Harvard University
K. Kim, Harvard University
J.S. Park, Harvard University
R.G. Gordon, Harvard University
Correspondent: Click to Email
Atomic layer deposition (ALD) of nickel thin films was demonstrated by using new nickel-amidinate precursors. Here we present a dozen nickel N,N'-Dialkyl-2-alkyl/aryl-amidinate derivatives as potential precursors for ALD. Their physical properties (volatility, thermal stability and chemical reactivity) were tuned by altering the alkyl groups. Nickel-bis(N,N'-di-tert-butylacetamidinate) showed the best overall properties as an ALD precursor. With NH@sub 3@ as a reducing agent at 270°C, self-limiting growth was achieved at a rate of 0.4 Å/cycle. Analyses of the deposited films showed only nickel. Nickel films grown on silicon nitride substrate had resistivity of 81 µ@ohm@-cm. Post-deposition annealing of nickel films on HF-last silicon showed the formation of nickel silicide.