AVS 52nd International Symposium
    Thin Films Tuesday Sessions
       Session TF-TuM

Paper TF-TuM4
Selective Atomic Layer Deposition (ALD) for Fabrication of Metal and Oxide Nanotubes

Tuesday, November 1, 2005, 9:20 am, Room 306

Session: Atomic Layer Deposition - Oxides
Presenter: J.Y. Kim, Kookmin University, Korea
Authors: J.Y. Kim, Kookmin University, Korea
D. Jeong, Kookmin University, Korea
S. Won, Kookmin University, Korea
H. Shin, Kookmin University, Korea
J. Lee, Kookmin University, Korea
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In this study, we have fabricated various metal and oxide nanotubes using selective atomic layer deposition (ALD). We easily control the nanotubes shape and make high aspect ratio nanotubes by selective ALD using SAMs such as OTS(octadesyl-tetrachlorosilane). We avoid unnecessary deposition on top of nanotemplates such as poly-carbornate, which results in stand alone nanotubes without connection. The selective ALD is performed on sacrificial nanotemplates with pore sizes of 30 - 200nm. The template were commercial available polycarbonate (PC) and anodic aluminum oxide (AAO) with various hole sizes and thicknesses. After deposition, template was removed by wet etching. We successfully obtain metal (Cu,Co) and oxide(ZrO2,TiO2) single material nanotubes. In addition, metal/oxide double wall nanotubes are fabricated by sequential ALD process. We make metal oxide nanotubes and measure various properties using high resolution-transmission electron microscope (HR-TEM), field emission-scanning electron microscope (FE-SEM), selective area electron diffraction (SAED) patterns, X-ray diffractionmeter (XRD). We also characterize electrical properties of the nanotubes using conducting-atomic force microscope (AFM). The authors gratefully acknowledge the financial support through center for nanostructured materials technology by Korean ministry of science and technology (03K1501-02410).