| AVS 52nd International Symposium | |
| Plasma Science and Technology | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | PS-TuA1 A New Wafer Level Micro Arcing Mechanism in 90nm CVD Low-K Via Etch on 300mm SOI Substrate H. Cong, C. Low, R.P. Yelehanka, X. Zhang, C. Perera, W. Liu, J.B. Tan, L.C. Hsia, Chartered Semiconductor MFG Ltd, Singapore |
| 2:20pm | PS-TuA2 CD and Etch Front Control with Reduced Plasma Damage in Etch and Ash Processes for Porous low-k Materials R. McGowan, SEMATECH, B. White, SEMATECH & AMD |
| 2:40pm | PS-TuA3 Influence of Plasma Modulation on low-k Etching in High Density Fluorocarbon Plasmas V. Raballand, G. Cartry, C. Cardinaud, Nantes University, France |
| 3:00pm | PS-TuA4 Control of Surface Reactions during Organic Low-k Dry Etching S. Uchida, M. Hori, Nagoya University, Japan, K. Oshima, A. Ando, K. Nagahata, T. Tatsumi, Sony Corporation, Japan |
| 3:20pm | PS-TuA5 Modeling of Organic Low-k Etching in a Two Frequency Capacitively Coupled Plasma in N@sub 2@/H@sub 2@ K. Ishihara, C. Shon, T. Yagisawa, T. Shimada, T. Makabe, Keio University, Japan |
| 3:40pm | PS-TuA6 Vacuum-Ultraviolet Photon Irradiation Effects in Fluorocarbon Plasmas on SiO@sub 2@ Etching Surface Reactions using In vacuo Electron-Spin-Resonance K. Ishikawa, Tohoku University, Japan, Y. Yamazaki, S. Yamasaki, AIST, Japan, S. Noda, Y. Ishikawa, S. Samuakwa, Tohoku University, Japan |