| 8:20am |
PS-FrM1
Flexible Organic Electronics: the Role of Plasma Deposition in Multi-Layer Permeation Barrier Technology
M. Creatore, V.I.T.A. Lohmann, M.A. Blauw, Eindhoven University of Technology, the Netherlands, M.M. Koetse, H.F.M. Schoo, TNO Science and Industry, the Netherlands, M.C.M. Van De Sanden, Eindhoven University of Technology, the Netherlands |
| 8:40am |
PS-FrM2
Effect of Chamber Wall Condition for Organic Film Etching Using N@sub2@/H@sub2@ Plasma
K. Oshima, T. Tatsumi, K. Nagahata, K. Shinohara, Sony Corp., Japan |
| 9:00am |
PS-FrM3
Comparison of Hydrocarbon and Fluorocarbon Polyatomic Ion Beam Treatment of Polystyrene
W.-D. Hsu, I. Jang, S.B. Sinnott, University of Florida |
| 9:20am |
PS-FrM4
Comparison of Surface Reactivity of CN, NH, and NH@sub 2@ Radicals during Deposition of Amorphous Carbon Nitride Films from r.f. Inductively Coupled Plasmas
D. Liu, I.T. Martin, J. Zhou, E.R. Fisher, Colorado State University |
| 9:40am |
PS-FrM5
Real-time, Nonintrusive Monitoring of Drifting Ion Energy and Flux in a High-Density, Inductively Coupled Plasma Reactor
M.A. Sobolewski, National Institute of Standards and Technology |
| 10:00am |
PS-FrM6
Saturation of Etching Rate in Downstream Plasma Chamber Cleaning
J.J. An, B. Bai, H.H. Sawin, MIT |
| 10:20am |
PS-FrM7
Depletion of Plasma-Induced Charge on Semiconductor Dielectrics using Ultraviolet and Vacuum Ultraviolet Radiation
G.S. Upadhyaya, J.L. Shohet, J.L. Lauer, R.W.C. Hansen, University of Wisconsin-Madison |
| 10:40am |
PS-FrM8
Investigating the Interaction of High-Pressure, High Temperature Plasmas with Propellant Surfaces through Experimental Modeling
R. Valliere, A. Dyachenko, R. Blumenthal, Auburn University |