AVS 52nd International Symposium
    Plasma Science and Technology Friday Sessions
       Session PS-FrM

Paper PS-FrM1
Flexible Organic Electronics: the Role of Plasma Deposition in Multi-Layer Permeation Barrier Technology

Friday, November 4, 2005, 8:20 am, Room 302

Session: Plasma Surface Interactions III
Presenter: M. Creatore, Eindhoven University of Technology, the Netherlands
Authors: M. Creatore, Eindhoven University of Technology, the Netherlands
V.I.T.A. Lohmann, Eindhoven University of Technology, the Netherlands
M.A. Blauw, Eindhoven University of Technology, the Netherlands
M.M. Koetse, TNO Science and Industry, the Netherlands
H.F.M. Schoo, TNO Science and Industry, the Netherlands
M.C.M. Van De Sanden, Eindhoven University of Technology, the Netherlands
Correspondent: Click to Email
The multi-layer system of alternated inorganic and organic layers is the state-of-the-art technology for flexible organic electronics where water vapor transmission rates down to 10@super -6@g/m@super 2@day are demanded. Under debate is the role of the organic layer, which appears crucial in affecting the growth of the inorganic film, as well as the multi-layer mechanical performance. In this framework, plasma technology has not been yet fully explored; however, it is expected to contribute to the improvement of a multi-layer system design because of the development (and, ultimately, the control) of a polymer/ inorganic layer interphase region. In this contribution we report on the studies performed by means of in situ real time diagnostics (e.g., spectroscopic ellipsometry) during the plasma deposition of inorganic (SiO@sub 2@) moisture barrier layers on polymers (poly(ethylene 2,6 naphtalate)), as well as during the growth of the organic (silicone-like) interlayer. The layers are deposited in an Ar-fed expanding thermal plasma, where the deposition precursors (hexamethyldisiloxane and oxygen) are injected downstream and negligible ion bombardment (< 2 eV) takes place at the substrate. In these conditions, a polymer/SiO@sub 2@ interphase region develops, attributed to a sub-surface polymer modification during the initial film growth by means of a non- depositing radical (O, OH) flux competitive with the depositing radical (Si, SiO) flux towards the substrate. The effect of ion bombardment (either delivered with an average ion energy or a narrow ion energy distribution), as provided by externally biasing the substrate, is also under investigation. Its effects on the interphase region as well as on the roughness evolution, both strictly related to the multi-stack moisture permeation and mechanical performances, will be addressed.