| AVS 52nd International Symposium | |
| Electronic Materials and Processing | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | EM-MoA1 Invited Paper Peter Mark Award Lecture: Synthesis and Patterning of Multifunctional Oxides J.P. Chang, University of California, Los Angeles |
| 2:40pm | EM-MoA3 DFT Investigation of the Initiation of HfO@sub2@ ALD on H-Si(100)-2x1 and Nitrided Si Surfaces Y. Xu, C.B. Musgrave, Stanford University |
| 3:00pm | EM-MoA4 Hafnium Based High K Dielectrics for Advanced ULSI Technology S. Muthukrishnan, S. Kher, P. Narwankar, R. Sharangapani, T. Goyani, Y. Ma, K. Ahmed, G. Conti, Applied Materials Inc. |
| 3:20pm | EM-MoA5 Invited Paper Plasma-enhanced ALD for CMOS Applications G. Wilk, S. Marcus, P. Raisanen, ASM America, Y.M. Yoo, D.Y. Kim, ASM Genitech |
| 4:00pm | EM-MoA7 LPCVD of Thin TiO@sub 2@ Films using TDEAT as Ti Source Gas and NH@sub 3@ as a Catalyst X. Song, C.G. Takoudis, University of Illinois at Chicago |
| 4:20pm | EM-MoA8 MOCVD of ZrO@sub 2@ Thin Films Using the Novel Single Precursor Zirconium 3-methyl-3-pentoxide, Zr(mp)@sub 4@ W. Cho, K.-S. An, Y.K. Lee, T.-M. Chung, Korea Research Institute of Chemical Technology, South Korea, D. Jung, Sungkyunkwan University, South Korea, Y. Kim, Korea Research Institute of Chemical Technology, South Korea |
| 4:40pm | EM-MoA9 The Effect of Nitrogen Incorporation on the Thermal Stability of La, Hf-aluminate Gate Stacks on Silicon P. Sivasubramani, P. Zhao, F.S. Aguirre-Tostado, J. Kim, M.J. Kim, B.E. Gnade, R.M. Wallace, University of Texas at Dallas |
| 5:00pm | EM-MoA10 Atomic Layer Chemical Vapor Deposition and Characterization of Hf-silicate, Hf-silicate/Al2O3, and Hf-silicate/SiO2 Gate Dielectrics J. Kim, K. Yong, POSTECH, Korea |