AVS 52nd International Symposium
    Electronic Materials and Processing Monday Sessions
       Session EM-MoA

Paper EM-MoA8
MOCVD of ZrO@sub 2@ Thin Films Using the Novel Single Precursor Zirconium 3-methyl-3-pentoxide, Zr(mp)@sub 4@

Monday, October 31, 2005, 4:20 pm, Room 309

Session: High-k Dielectric Growth and Processing
Presenter: Y. Kim, Korea Research Institute of Chemical Technology, South Korea
Authors: W. Cho, Korea Research Institute of Chemical Technology, South Korea
K.-S. An, Korea Research Institute of Chemical Technology, South Korea
Y.K. Lee, Korea Research Institute of Chemical Technology, South Korea
T.-M. Chung, Korea Research Institute of Chemical Technology, South Korea
D. Jung, Sungkyunkwan University, South Korea
Y. Kim, Korea Research Institute of Chemical Technology, South Korea
Correspondent: Click to Email
Thin films of zirconium dioxide, ZrO@sub 2@, have been deposited on silicon substrates by metal organic chemical vapor deposition (MOCVD) using the novel single precursor, zirconium 3-methyl-3-pentoxide {Zr[OC(CH@sub 3@)(C@sub 2@H@sub 5@)@sub 2@]@sub 4@, Zr(mp)@sub 4@}, with no additional oxygen source, and the CVD reaction mechanism was also investigated. In its thermogravimetric analysis (TGA), Zr(mp)@sub 4@ showed an excellent one-step weight loss and a low residual weight (less than 2.5%). The deposition rate was found to be ~30 Å/min at the substrate temperature of 400 °C and the activation energy of deposition was 33.3 kJ/mol which is similar to that of zirconium tert-butoxide, Zr(O@super t@Bu)@sub 4@. By gas chromatography/mass spectroscopy (GC/MS) and nuclear magnetic resonance (NMR) analyses of the thermally decomposed vapor phase products collected during the deposition of ZrO@sub 2@ films, it was clearly found that the films were grown via @beta@-hydrogen elimination processes of the Zr(mp)@sub 4@ single precursor. Negligible carbon contamination of the ZrO@sub 2@ films, examined by x-ray photoelectron spectroscopy (XPS), indicates that, except for the @beta@-hydrogen elimination processes, no additional decomposition and/or recombination processes contributed to the ZrO@sub 2@ film growth. The morphology, crystallinity, and electrical properties of the ZrO@sub 2@ films were characterized by atomic force microscopy (AFM), x-ray diffraction (XRD), and capacitance-voltage (C-V) and current-voltage (I-V) measurements.