The continuous down-scaling of the microelectronic and optoelectronic integrated circuits dictates the development of atomic layer deposition and high fidelity pattern transfer processes to synthesize and integrate novel materials, such as multifunctional oxides, into nanometer scaled devices. In this talk, I will first discuss current research progress in atomic layer deposition for synthesizing transition metal oxides which can be used as a gate dielectric material on semiconductors in transistors, or as a waveguide core material for planar miniature optical amplifiers. The interfacial composition and dipole are found to control the band alignment at the dielectric/semiconductor heterojunctions, while the short range order as determined by extended x-ray absorption fine structure analysis governs the electronic and optoelectronic properties. To integrate these oxide materials into future generations of devices, a viable etching process is needed to its realization. I will address the design of plasma chemistries to selectively pattern these oxide materials, including the individual and synergistic effects of ions and radicals, and their impact on device integration.