AVS 52nd International Symposium
    Electronic Materials and Processing Monday Sessions
       Session EM-MoA

Invited Paper EM-MoA5
Plasma-enhanced ALD for CMOS Applications

Monday, October 31, 2005, 3:20 pm, Room 309

Session: High-k Dielectric Growth and Processing
Presenter: G. Wilk, ASM America
Authors: G. Wilk, ASM America
S. Marcus, ASM America
P. Raisanen, ASM America
Y.M. Yoo, ASM Genitech
D.Y. Kim, ASM Genitech
Correspondent: Click to Email
Plasma-enhanced ALD (PEALD) is a novel deposition technique which allows low-temperatures and a wide selection of precursors. PEALD films result in substantial leakage current benefit compared to thermal ALD films for dielectrics, and result in low-resistivity metals compared to thermal ALD metals. This process also maintains the benefits of standard Atomic Layer Deposition, including outstanding thickness control and conformality. Several applications will be shown to have excellent capacitance, leakage and breakdown characteristics, including metal gates and MIM capacitors. A range of dielectrics and metals will be presented, including Al2O3, HfO2, Ta2O5 and TiN.