AVS 52nd International Symposium
    Plasma Science and Technology Wednesday Sessions
       Session PS+TF-WeM

Paper PS+TF-WeM6
Anisotropic Deposition of Cu and Ru in Trenches by H-assisted Plasma CVD

Wednesday, November 2, 2005, 10:00 am, Room 302

Session: Plasma Enhanced CVD and ALD
Presenter: M. Shiratani, Kyushu University, Japan
Authors: M. Shiratani, Kyushu University, Japan
T. Kaji, Kyushu University, Japan
K. Koga, Kyushu University, Japan
Correspondent: Click to Email
Previously we realized anisotropic deposition of Cu, for which Cu is filled preferentially from the bottom of trenches without being deposited on their sidewall, by H-assisted plasma CVD using Cu(HFAC)@sub 2@ as a source material.@footnote 1,2@ In this study, we have demonstrated anisotropic deposition of Cu from Cu(EDMDD)@sub 2@ and that of Ru from Ru(ACAC)@sub 3@. Ion irradiation to surface where deposition takes place, is the key to all of the anisotropic deposition processes, whereas deposition characteristics depend on materials. For Cu(EDMDD)@sub 2@ and Ru(ACAC)@sub 3@, the deposition rates on the bottom of trenches decrease with decreasing the trench width, while that for Cu(HFAC)@sub 2@ increases. These results suggest that anisotropic deposition by H-assisted plasma CVD using metal-complex has a potential to be applied to deposition processes of many kinds of metals, metal-oxide, and metal-carbide. We will compare deposition characteristics for Cu and Ru and discuss the deposition mechanisms. @FootnoteText@ @footnote 1@ K. Takenaka, et al., Pure. Appl. Chem. 77(2005)391.@footnote 2@ K. Takenaka, et al., J. Vac. Sci. Technol. A22(4) (2004) 1903.