AVS 51st International Symposium
    Thin Films Monday Sessions

Session TF-MoP
Poster Session

Monday, November 15, 2004, 5:00 pm, Room Exhibit Hall B


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Click a paper to see the details. Presenters are shown in bold type.

TF-MoP1
Effect of the Deposition Parameters on the Microstructure and Optical Properties of Yttria-stabilized Zirconia Thin Films Deposited by r.f. Reactive Magnetron Sputtering
M.H. Shiao, National Science Council, Taiwan, C.W. Peng, Kun Shan University of Technology, Taiwan, C.Y. Su, National Science Council, Taiwan, C.C. Jiang, Ming Hsin University of Science & Technology, Taiwan, S.C. Chang, Kun Shan University of Technology, Taiwan
TF-MoP2
(CdTe)@sub 1-x@Al@sub x@ Thin Films Grown by RF Co-sputtering for Photovoltaic Applications@footnote 1@
L.A. Estrada -Domínguez, ESFM-IPN, México, M. Meléndez-Lira, M. Becerril-Silva, Cinvestav-IPN, México, M. Zapata-Torres, CICATA-IPN, México, S.J. Jiménez-Sandoval, Cinvestav-IPN, México
TF-MoP3
Tailored Stoichiometries of Silicon Carbonitride Thin Films Prepared by Combined RF Magnetron Sputtering and Ion Beam Synthesis
M. Bruns, U. Geckle, V. Trouillet, Forschungszentrum Karlsruhe GmbH, Germany, M. Rudolphi, H. Baumann, Universitaet Frankfurt /Main, Germany
TF-MoP4
Combinatorial Synthesis of Rare Earth-doped Yttrium Aluminum Garnet Thin Film Materials by Using rf Reactive Magnetron Sputtering
Y. Deng, J.D. Fowlkes, P.D. Rack, University of Tennessee
TF-MoP5
Electrical Properties of Ni-Cr Thin Films Deposited by Co-Sputtering Method
G.-B. Park, Yuhan College, Korea, P.-K. Shin, B.-J. Lee, Inha University, Korea
TF-MoP6
Target Surface Oxide Layer Formed by Reactive Sputtering of Ti Target in Ar+O@sub 2@ Mixed Gas
Y. Abe, K. Takamura, M. Kawamura, K. Sasaki, Kitami Institute of Technology, Japan
TF-MoP7
Water Absorption and Dielectric Changes in Crystalline Poly(vinylidene fluoride-trifluoroethylene) Copolymer Films
L.G. Rosa, P.A. Jacobson, C.M. Othon, K.L. Kraemer, A.V. Sorokin, S. Ducharme, P.A. Dowben, University of Nebraska-Lincoln
TF-MoP8
Water-incorporation in Reactively Sputtered Carbon Nitride Coatings
B.L. French, Z. Yang, B.C. Holloway, College of William and Mary
TF-MoP9
Deposition of Thin Films on Inclined Surfaces Using Ionized PVD
M. Lattemann, J. Alami, J. Böhlmark, U. Helmersson, Linköping University, Sweden
TF-MoP10
TCO Thin Film Characteristics with Respect to Multi Layer Coatings between Plastic Substrate and ITO Layer
M.G. Kim, H.S. Jeong, Y.W. Seo, ITM Inc., Korea, S.J. Kwon, Kyungwon Univ., Korea
TF-MoP11
Photoluminescence Behaviors of Eu-doped Sr@sub 2@SiO@sub 4@ Thin Film Phosphors Deposited by Pulsed Laser Deposition
S.S. Yi, Silla University, Korea, J.S. Bae, J.H. Jeong, Pukyong National University, Korea, J.H. Kim, Dongeui University, Korea, H. Park, Yonsei University, Korea
TF-MoP12
Luminescence Characteristics of Eu-doped GdVO@sub 4@ Thin Films Grown by Pulsed Laser Deposition
J.H. Jeong, J.S. Bae, B.K. Moon, H.J. Seo, Pukyong National University, Korea, S.S. Yi, Silla University, Korea
TF-MoP13
Preparation of Transparent and Conductive Multicomponent Zn-In-Sn Oxide Thin Films by Vacuum Arc Plasma Evaporation
T. Minami, S. Tsukada, Y. Minamino, T. Miyata, Kanazawa Institute of Technology, Japan
TF-MoP14
Cathodic Vacuum Arc Deposition of MgO Thin Films on the Large Area Glass Substrate
L. Sunghun, B. Sung-Kyu, K. Jong-Kuk, L. Gun-Hwan, Korea Institute of Machinery and Materials, Korea
TF-MoP15
Chemical Mechanical Polishing Characteristics of SnO2 Thin Film for Gas Sensor Application
Y.J. Seo, DAEBUL University, South Korea, K.W. Choi, W.S. Lee, Chosun University, South Korea
TF-MoP16
Defect Study Post the Tungsten Etch Back Process Step
A. Sidhwa, J. Zhang, V. Varadarjan, C. Li, B. Le, G. Magsamen, STMicroelectronics, Inc.
TF-MoP17
Fabrication of Well-defined Cu Nanodots Based on an Electroless Plating using Diblock Copolymer Nanotemplate
S. Asakura, Waseda University, Japan, A. Hozumi, National Institute of Advanced Industrial Science and Technology, Japan, K. Oda, A. Fuwa, Waseda University, Japan
TF-MoP19
Observation of Plastic Deformation in TIALCN/A-C Ceramic Nanocomposite Coating
J. Shieh, National Nano Device Laboratory, Taiwan, M.-H. Hon, National Cheng Kung University, Taiwan
TF-MoP20
Strained Si n-channel Metal-oxide-semiconductor Transistor on Relaxed SiGe Film with an Intermediate Si:C Layer
S.-W. Lee, National Tsing Hua University, Taiwan, P.S. Chen, Industrial Technology Research Institute, Taiwan, Y.L. Chieh, National Tsing Hua University, Taiwan, M.-J. Tsai, C.W. Liu, Industrial Technology Research Institute, Taiwan, L.J. Chen, National Tsing Hua University, Taiwan
TF-MoP21
Gas Barrier Properties of the Composite Films Consisting of SiO2 and SnO2
W.H. Koo, S.M. Jeong, S.H. Choi, H.K. Baik, Yonsei University, Korea, S.M. Lee, Kangwon National University, Korea, S.J. Lee, Kyungsung University, Korea
TF-MoP22
Ultra High Resolution Tomographic Reconstruction Using Scanning Electron Microscope and Focused Ion Beam
R.K. Bansal, R.V. Hull, J.M. Fitz-Gerald, University of Virginia
TF-MoP23
Deposition of Ti(C,N) AND Zr(C,N) Thin Films by Plasma Assisted MOCVD and In-Situ Plasma Diagnostics with Optical Emission Spectroscopy
J.-H. Boo, S.W. Lee, Y.K. Cho, J.G. Han, Sungkyunkwan University, South Korea
TF-MoP24
In-situ Characterization of HfO@sub 2@ and AlN Films on SiC
C.M. Tanner, J. Choi, J.P. Chang, University of California, Los Angeles
TF-MoP25
Conduction Anisotropy in Nanostructured Titanium Films
D.W. Vick, M.J. Brett, University of Alberta, Canada
TF-MoP26
Monolayer Template Patterning of Ceramic Film on Flexible Plastic Substrate
N. Shirahata, Y. Sakka, National Institute of Materials Science, Japan, A. Hozumi, National Institute of Advanced Industrial Science and Technology, Japan
TF-MoP27
Comparison of the Agglomeration Behavior of Thin Metallic Films on SiO@sub 2@
P.R. Gadkari, A.P. Warren, R.M. Todi, T. Cubano-Cruz, K.R. Coffey, University of Central Florida
TF-MoP28
Effect of a Buffer Layer on the Photovoltaic Properties of AZO/Cu@sub 2@O Solar Cells
T. Minami, Kanazawa Institute of Technology, Japan, H. Tanaka, Gunze Limited, Japan, T. Shimakawa, T. Miyata, Kanazawa Institute of Technology, Japan, H. Sato, Gunze Limited, Japan
TF-MoP29
Microstructural Evolution and Properties of the AlN Thin Films prepared under Different Processing Parameters
C.-C. Wang, National Chung Hsing University, Taiwan, M.H. Shiao, National Science Council, Taiwan, C.-J. Lu, F.S. Shieu, National Chung Hsing University, Taiwan
TF-MoP30
AFM and SNOM Characterization of Carboxylic Acid Terminated Silicon and Silicon Nitride Surfaces
A. Cricenti, National Research Council, Italy, R. Generosi, M. Girasole, CNR, Italy, G. Margaritondo, EPFL, Switzerland, P. Thielen, Naval Research Laboratory, D. Vobornik, EPFL, Switzerland, J.S. Sanghera, I.D. Aggarwal, Naval Research Laboratory, N.H. Tolk, D.W. Piston, Vanderbilt University, A. Flamini, T. Prosperi, F. Cattaruzza, A. Mezzi, P. Perfetti, G. Ustione, A. Ustione, CNR, Italy
TF-MoP31
Relationship of Microstructure and Discharge Characteristics of MgO Protecting Layer of AC-PDPs
S.Y. Park, M.J. Lee, S.H. Moon, S.G. Kim, H.J. Kim, Seoul National University, South Korea
TF-MoP32
Thin Film Deposition of SiO@sub 2@ Using Electron-Beam Generated Plasmas
D. Leonhardt, S.G. Walton, Naval Research Laboratory, C. Muratore, ASEE/NRL Research Fellow, R.A. Meger, Naval Research Laboratory