AVS 51st International Symposium
    Thin Films Monday Sessions
       Session TF-MoP

Paper TF-MoP12
Luminescence Characteristics of Eu-doped GdVO@sub 4@ Thin Films Grown by Pulsed Laser Deposition

Monday, November 15, 2004, 5:00 pm, Room Exhibit Hall B

Session: Poster Session
Presenter: J.S. Bae, Pukyong National University, Korea
Authors: J.H. Jeong, Pukyong National University, Korea
J.S. Bae, Pukyong National University, Korea
B.K. Moon, Pukyong National University, Korea
H.J. Seo, Pukyong National University, Korea
S.S. Yi, Silla University, Korea
Correspondent: Click to Email
GdVO@sub 4@:Eu@super 3+@ thin film phosphors were deposited on Al@sub 2@O@sub 3@ (0001) substrates by pulsed laser deposition. The films were grown at the various substrate temperatures and the different oxygen pressures. The crystallinity and surface morphology of the films were investigated using X-ray diffraction and atomic force microscope, respectively. And the photoluminescence spectra were measured at room temperature using a luminescence spectrometer and excitation by a broadband incoherent ultraviolet light source with a dominant excitation wavelength of 254 nm. The photoluminescence brightness data obtained from GdVO@sub 4@:Eu@super 3+@ films grown under optimized conditions have indicated that sapphire is a good substrate for the growth of high quality GdVO@sub 4@:Eu@super 3+@ thin film red phosphor. Due to a @super 5@D@sub 0@-@super 7@F@sub 2@ transition within europium, GdVO@sub 4@:Eu@super 3+@ shows red luminescence at 612 nm. The crystallinity and surface morphology of the films were influenced by the deposition conditions. It was found that the luminescence of the GdVO@sub 4@:Eu@super 3+@ films is highly dependent on the crystallinity and surface roughness of the films.