AVS 51st International Symposium
    Thin Films Monday Sessions
       Session TF-MoP

Paper TF-MoP1
Effect of the Deposition Parameters on the Microstructure and Optical Properties of Yttria-stabilized Zirconia Thin Films Deposited by r.f. Reactive Magnetron Sputtering

Monday, November 15, 2004, 5:00 pm, Room Exhibit Hall B

Session: Poster Session
Presenter: C.W. Peng, Kun Shan University of Technology, Taiwan
Authors: M.H. Shiao, National Science Council, Taiwan
C.W. Peng, Kun Shan University of Technology, Taiwan
C.Y. Su, National Science Council, Taiwan
C.C. Jiang, Ming Hsin University of Science & Technology, Taiwan
S.C. Chang, Kun Shan University of Technology, Taiwan
Correspondent: Click to Email
Yttria-stabilized zirconia (YSZ) thin films were prepared on (100) Si and quartz substrates by r.f. reactive magnetron sputtering system. Different oxygen to Argon (O@sub 2@/Ar) flow rate ratios (0% and 2.5%) and working pressures (0.33 Pa to 0.8 Pa) were investigated in the substrate temperatures ranging from room temperature to 500°C. Microstructure and surface roughness (R@sub a@) were examined by X-ray diffraction (XRD) and atomic force microscopy. Optical properties such as refractive index, extinction coefficient and transmission spectrum were measured by spectroscopic ellipsometer and spectrometer. It was found that without oxygen flow rate and the working pressure controlled at 0.33 Pa, the process have the highest deposition rate (2.5 nm/min), the highest transmittance (92.65%) and the lowest surface roughness (2.5 Å) at the deposition temperature of 300 °C. The YSZ crystalline orientation gradually changes from (111) to (200) when the deposition temperature above 300°C. When the oxygen to Argon flow rate ratio was 2.5% and the working pressure controlled at 0.33 Pa, the surface roughness decreases with increasing deposition temperature. But it still has the highest deposition rate (1.52 nm/min) and the highest transmittance (92.35%) at the deposition temperature of 300°C. The phase changes from amorphous to crystalline above the deposition temperature of 300°C. The deposition rate, surface roughness and transmittance decreased with increasing working pressure when the oxygen to Argon flow rate ratio and deposition temperature were controlled at 0% and 300°C, respectively.