| AVS 51st International Symposium | |
| Plasma Science and Technology | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| PS-MoP1 Photoresist Stripping after Low-k Dielectric Layer Pattering Using Axial Magnetic Field Assisted Reactive Ion Etching H.-Y. Song, C.-W. Kim, Inha University, South Korea, J.-K. Yang, C.-W. Lee, PSK Tech Inc., South Korea, S.-G. Park, B.-H. O, S.-G. Lee, E.-H. Lee, D.H. Park, G.-J. Kim, Inha University, South Korea |
| PS-MoP2 Etching Characteristics of Organic Polymers by Plasma Beam Irradiation K. Kurihara, Toshiba Corp., Japan, A. Egami, M. Nakamura, Association of Super-Advanced Electronics Technologies, Japan |
| PS-MoP3 Effects of Ar Plasma on DVS-BCB Monomer Used for Low-k Film Deposition T. Wakai, T. Shirafuji, K. Tachibana, Kyoto University, Japan |
| PS-MoP4 A New Plasma Source for Destruction of Organic Material in the Post Chamber Hardware, and Implications for Process Endpoint Detection for Specific Low-k Applications. A.K. Srivastava, P. Sakthivel, Axcelis Technologies, Inc., T.J. Buckley, Formerly, Axcelis Technologies, Inc., A.F. Becknell, Axcelis Technologies, Inc. |
| PS-MoP5 RF-plasma Functionalization of Large Quantity of Carbon Nanotubes: XPS and AFM Analysis of O2 and CF4 Treatments A. Felten, C. Bittencourt, LISE, Belgium, S. Cuenot, R. Daussin, C. Bailly, Universite Catholique de Louvain, Belgium, J.-J. Pireaux, LISE, Belgium |
| PS-MoP6 Suppression of ArF Photoresist Deformation in Inductively Coupled Plasma (ICP) K.J. Lim, S.-B. Jo, K.-C. Lee, INHA University, South Korea, K.-Y. Jung, CNI, South Korea, S.-G. Park, B.-H. O, INHA University, South Korea |
| PS-MoP7 Experimental Characterization of an Inductively-Coupled Acetylene/Hydrogen Plasma for Carbon Nanofibers Synthesis Y.Y. Lin, K.C. Leou, H.H. Wei, M.T. Wei, C. Lin, C.H. Tsai, National Tsing Hua University, Taiwan |
| PS-MoP8 In-Situ FTIR Characterization of Gas Phase Chemistry in Continuous and Pulsed Inductively Coupled 1,3-Butadiene Discharges in a Gec Cell, Cross-Correlated Against Ex-Situ ATR Surface Analysis A.K. Jindal, The University of Texas at Dallas, A.J. Prengler, NEC, J.R. Frautschi, Western Life Sciences, L.J. Overzet, M.J. Goeckner, The University of Texas at Dallas |
| PS-MoP9 Impact of Plasma Polymerization on Cd Bias and Ler S.K. kim, Cypress Semiconductor |
| PS-MoP10 Deformation of ArF Photoresist and Silicon Nitride Etching using Dual Frequency Superimposed (DFS) rf Capacitive Coupled Plasma D.H. Kim, S.H. Cho, J.G. Lee, N.-E. Lee, Sungkyunkwan University, South Korea |
| PS-MoP11 Si@sub x@O@sub y@F@sub y@ Passivation Layer in the Silicon Deep Etching Cryogenic Process X.M. Mellhaoui, R.D. Dussart, T.T. Tillocher, P.L. Lefaucheux, P.R. Ranson, GREMI - Orléans University, France |
| PS-MoP12 High Aspect Ratio Contact Hole Etching in C@sub 4@/F@sub 6@/O@sub 2@/Ar/CH@sub 2@F@sub 2@ and c-C@sub 4@/F@sub 8@/O@sub 2@/Ar/CH@sub 2@F@sub 2@ Plasmas H.-K. Ryu, LG Chem, Ltd., Korea, C.B. Shin, Ajou University, Korea, Y.-W. Kim, Hynix Semiconductor, Inc., Korea, C.-K. Kim, Ajou University, Korea |
| PS-MoP13 Investigation on the Plasma Parameters and the Properties of the Reactively Sputtered Titanium Oxynitride Thin Films A. Karuppasamy, A. Subrahmanyam, Indian Institute of Technology Madras, India |
| PS-MoP14 Anomalous Ionization of Copper Atoms in Argon-Based Sputtering Plasmas H. Kadota, K. Nakamura, Chubu University, Japan, N. Nafarizal, K. Sasaki, Nagoya University, Japan, M. Kobayashi, ANELVA, Japan |
| PS-MoP15 Ionization Processes of Metal Atoms in High-Pressure dc Magnetron Sputtering Discharges N. Nafarizal, Nagoya University, Japan, K. Shibagaki, Suzuka National College of Technology, Japan, N. Takada, Nagoya University, Japan, K. Nakamura, Chubu University, Japan, M. Kobayashi, ANELVA Corporation, Japan, K. Sasaki, Nagoya University, Japan |
| PS-MoP16 Plasma Chemistry of a Nb/Ar/O@sub 2@ Magnetron Discharge S. Mráz, M. Wuttig, J.M. Schneider, RWTH Aachen, Germany |
| PS-MoP17 Dry Etching of (Pb,Sr)TiO@sub 3@ Thin Films Using Inductively Coupled Plasma C.I. Kim, K.T. Kim, G.H. Kim, Chungang University, Korea, T.H. Kim, YeoJoo Institute of Technology, Korea, C.I. Lee, Ansan College of Technology, Korea |
| PS-MoP18 Irregular Pattern Deformation in Etching of High Aspect Ratio Contact Holes S.-I. Cho, S.-Y. Son, Y.-J. Kim, M.-C. Kim, K.-K. Chi, C.-J. Kang, J.-T. Moon, Samsung Electronics Co. LTD, South Korea |
| PS-MoP19 Etching Profile of (Ba,Sr)TiO@sub 3@ Thin Films in a BCl@sub 3@/Cl@sub 2@/Ar Inductively Coupled Plasma C.I. Kim, K.T. Kim, G.H. Kim, Chungang University, Korea |
| PS-MoP20 Characteristics of Neutral Beam Generated by 3-grid Low Angle Forward Reflected Neutral Beam System and its Etching Properties D.H. Lee, B.J. Park, G.Y. Yeom, Sungkyunkwan University, South Korea |
| PS-MoP21 Plasma Etching of Pyrex Glass by Inductively Coupled Plasma for Fabrication of Microfluidic Channel J.H. Park, N.-E. Lee, Sungkyunkwan University, South Korea, J.S. Park, H.D. Park, Korea Electronics Technology Institute, South Korea |
| PS-MoP22 Etching Characteristics of Al-doped ZnO Thin Films in ICP Etcher S.W. Na, M.H Shin, Y.M. Chung, J.G. Han, J.-H. Boo, N.-E. Lee, Sungkyunkwan University, South Korea |
| PS-MoP23 Effect of BCl3 Addition on Etching Characteristics of TaN in BCl3/Cl2/Ar Inductively Coupled Plasma M.H Shin, S.W. Na, N.-E. Lee, Sungkyunkwan University, South Korea, J.H. Ahn, Hanyang University, South Korea |
| PS-MoP24 High-density Plasma in Low-pressure will Cast a Bright Foresight in a 45 nm Node Etching Process Y. Morikawa, T. Hayashi, K. Suu, M. Ishikawa, ULVAC, Inc., Japan |
| PS-MoP25 Study on Effects of Ion Irradiation on Plasma Anisotropic Cu CVD using a Triode Discharge K. Takenaka, T. Kaji, K. Koga, M. Shiratani, Y. Watanabe, Kyushu University, Japan |
| PS-MoP26 Deep Silicon Etch and In-Situ Passivation of Silicon Mold S.-B. Jo, S.-G. Lee, E.-H. Lee, S.-G. Park, B.-H. O, INHA University, South Korea |
| PS-MoP27 Instabilities of Nanoporous Silica (NPS) During Plasma-Based Pattern Transfer and Subsequent Resist Stripping X. Hua, T. Kwon, R. Phaneuf, G. Oehrlein, University of Maryland, College Park, P. Lazzeri, M. Anderle, ITC-irst, Italy, P. Jiang, Texas Instruments, Inc., C.K. Inoki, T.S. Kuan, University at Albany, SUNY |
| PS-MoP28 Real-Time Etch Optimization in Electron Cyclotron Resonance-Microwave CO/H@sub 2@ and CO@sub 2@/H@sub 2@ Plasmas A.A. Dyachenko, A.S. Orland, Auburn University, R. Blumenthal, Auburn Univerisity |
| PS-MoP29 Anisotropic Etching of Sio@sub 2@ Film and Quartz Plate Employing Anhydrous Hf T. Fukasawa, Tokai University, Japan |
| PS-MoP30 Self-Aligned Contact Etch Development for 90nm Technology Node M.G. Sedigh, H. Lee, J. Zhang, Cypress Semiconductor, J. Stinnett, A. Joshi, Applied Materials, Inc. |
| PS-MoP31 Atomic Layer Etching of Silicon using a Low Angle Forward Reflected Ar Neutral Beam S.D Park, D.H. Lee, G.Y. Yeom, Sungkyunkwan University, South Korea |
| PS-MoP32 Vertical Platinum Etch Profile for Electrode of High-K Dielectric Materials with Cl@sub 2@/Ar/C@sub 4@F@sub 8@ Plasma C.W. Kim, H.-Y. Song, Y.H. Choi, S.G. Yang, Inha University, South Korea, J.G. Lee, Bucheon College, South Korea, S.-G. Lee, B.-H. O, I.H. Lee, S.-G. Park, Inha University, South Korea |
| PS-MoP33 Process Consideration in MRAM Metal Etch S. Kanakasabapathy, IBM T.J. Watson Research Center |
| PS-MoP34 A Zero-order Semi-Empirical Physical Model for Chemically-Enhanced Physical Vapor Deposition (CEPVD) of Ta(C)N} N. Li, D.N. Ruzic, University of Illinois at Urbana-Champaign |