AVS 51st International Symposium
    Plasma Science and Technology Monday Sessions
       Session PS-MoP

Paper PS-MoP20
Characteristics of Neutral Beam Generated by 3-grid Low Angle Forward Reflected Neutral Beam System and its Etching Properties

Monday, November 15, 2004, 5:00 pm, Room Exhibit Hall B

Session: Poster Session
Presenter: D.H. Lee, Sungkyunkwan University, South Korea
Authors: D.H. Lee, Sungkyunkwan University, South Korea
B.J. Park, Sungkyunkwan University, South Korea
G.Y. Yeom, Sungkyunkwan University, South Korea
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Plasma etching is widely used for the fabrication of deep submicron silicon based integrated circuits. However, plasma etching has a serious disadvantage due to the energetic charged particles such as positive ions and photons generated in the plasma which causes radiation damage resulting in physical defect, increased gate oxide breakdown, charging, etc. To avoid these charge-related and physical impact-related damages, several low-damage processes have been proposed. One possible alternative to avoid these problems is to use low energy neutral beam. In fact, many studies have been conducted previously and currently being conducted to generate parallel and low energy neutral beams and to etch materials vertically without having electrical charging and physical damage. In our study, to extract the parallel neutrals from the plasma, a neutralizing reflector having less than 5 degree sloped to the extracted ions was used which called low angle forward reflected neutral beam. In this study, the characteristics of a neutral beam and the etch characteristics of Si and SiO2 for SF6 gas have been studied using a low-angle forward-reflected neutral (LAFRN) beam system. In other to obtain higher neutral flux and lower beam energy, a 3-grid system was used to the neutral beam source and the neutral beam energy and flux was investigated using a quadrupole mass spectrometer.