Magnetic Random Access Memory (MRAM) holds the promise to evolve into a non-volatile universal memory@footnote 1@,@footnote 2@. The MTJ stack comprises of a top data storing magnetic film that is separated by a thin Tunnel Barrier in the order of 10A from a bottom magnet@footnote 3@. MTJ patterning involves etching of non-volatile magnetic alloys without the benefit of a high thermal budget. The sidewall redepositon of the etch products is a key yield detractor in these etches@footnote 4@. Besides tapering the profile to achieve sidewall cleaning, stopping on the very thin tunnel barrier is considered an option to minimize this detractor. We present in this paper, such options and contrast them. @FootnoteText@ @footnote 1@W.J. Gallagher et al,"Microstructured Magnetic Tunnel Junctions", Journal of Applied Physics, 81, p.3741 (1997).@footnote 2@S. Tehrani et al,"High Density Submicron Magnetoresistive Random Access Memory", Journal of Applied Physics, 85, 5882 (1999).@footnote 3@S.S.P Parkin et al, "Exchange Biased Magnetic Tunnel Junctions and Application to Nonvolatile Random Access Memory", Journal of Applied Physics, 85, 5828 (1999).@footnote 4@R. Ditizio et al, "Cell Shape and Patterning Considerations for Magnetic Random Access Memory (MRAM) Fabrication", Semiconductor Manufacturing Magazine, January 2004. .