AVS 51st International Symposium
    Plasma Science and Technology Wednesday Sessions
       Session PS2-WeM

Paper PS2-WeM8
Scaling of Low-pressure Ionized Metal PVD Reactors@footnote 1@

Wednesday, November 17, 2004, 10:40 am, Room 213B

Session: Plasma Sources
Presenter: V. Vyas, University of Illinois at Urbana-Champaign
Authors: V. Vyas, University of Illinois at Urbana-Champaign
M.J. Kushner, University of Illinois at Urbana-Champaign
Correspondent: Click to Email
Ionized metal physical vapor deposition (IMPVD) at sub-mTorr pressures is used to deposit diffusion barriers and seed layers onto high aspect ratio trenches. At these pressures, conventional fluid or hybrid simulations are of questionable validity as transport is highly non-equilibrium and a kinetic approach may be warranted. In this work, a Monte Carlo simulation for ion and neutral transport (IMCS) has been developed and integrated into a 2-dimensional plasma equipment model to improve our capabilities to address lower pressures. The ion velocity distributions obtained from the IMCS are used to obtain transport coefficients for use in heavy particle momentum and energy conservation equations, thereby extending their validity to lower pressures. Hollow Cathode Magnetron (HCM) plasma sources for Cu deposition have been investigated using the model while varying power, pressure and source geometry. The consequences of varying these parameters on the uniformity of reactant fluxes, and their energy and angular distributions on the substrate will be reported. Comparisons will be made to experiments for plasma properties and deposition profiles. @FootnoteText@ @footnote 1@ Work supported by SRC and NSF.