AVS 51st International Symposium
    Plasma Science and Technology Wednesday Sessions
       Session PS1-WeM

Paper PS1-WeM10
Catalytic Plasma Enhanced Chemical Vapor Deposition of Ultrasharp Vertically Aligned Silicon Nanocones and Their Characterization

Wednesday, November 17, 2004, 11:20 am, Room 213A

Session: Plasma in Nanoscale Applications
Presenter: K.L. Klein, University of Tennessee/ORNL
Authors: K.L. Klein, University of Tennessee/ORNL
A.V. Melechko, University of Tennessee/ORNL
P.D. Rack, University of Tennessee
D.K. Hensley, Oak Ridge National Lab
J.D. Fowlkes, University of Tennessee
H.M. Meyer III, Oak Ridge National Lab
L.F. Allard, Oak Ridge National Lab
D.H. Lowndes, Oak Ridge National Lab
M.L. Simpson, University of Tennessee/ORNL
Correspondent: Click to Email
We present a new method for the synthesis of vertically aligned ultrasharp silicon nanostructures with tip diameters as small as 10 nm. Silicon nanocones were produced using dc plasma-enhanced chemical vapor deposition (dc-PECVD) using the Si substrate as a sole source of Si and thin film Cu or Au as a catalyst. High resolution SEM, TEM, EDX, STEM, and AES were utilized to determine the microstructure and composition of the nanocones. We have explored variations in the structure and growth mode of these nanocones with respect to growth conditions. This structure will be described in detail and a growth mechanism proposed. The similarities and differences of this new growth process as compared to standard SiH4-based VLS growth will be discussed. Finally, we will describe their potential use in applications such as gene delivery arrays and field emission cathodes.