AVS 51st International Symposium
    Manufacturing Science and Technology Wednesday Sessions
       Session MS-WeM

Invited Paper MS-WeM5
Taking SOI and Low-k Dielectrics Into 130nm and 90nm High-Volume Microprocessor Production: Challenges, Processes, Extendibility

Wednesday, November 17, 2004, 9:40 am, Room 303B

Session: Semiconductor Manufacturing Technologies for the 45nm Crisis
Presenter: R. Stephan, Advanced Micro Devices, AMD Saxony LLC, Germany
Authors: R. Stephan, Advanced Micro Devices, AMD Saxony LLC, Germany
D. Greenlaw, Advanced Micro Devices, AMD Saxony LLC, Germany
G. Burbach, Advanced Micro Devices, AMD Saxony LLC, Germany
T. Feudel, Advanced Micro Devices, AMD Saxony LLC, Germany
F. Feustel, Advanced Micro Devices, AMD Saxony LLC, Germany
K. Frohberg, Advanced Micro Devices, AMD Saxony LLC, Germany
F. Graetsch, Advanced Micro Devices, AMD Saxony LLC, Germany
G. Grasshoff, Advanced Micro Devices, AMD Saxony LLC, Germany
C. Hartig, Advanced Micro Devices, AMD Saxony LLC, Germany
T. Heller, Advanced Micro Devices, AMD Saxony LLC, Germany
K. Hempel, Advanced Micro Devices, AMD Saxony LLC, Germany
M. Horstmann, Advanced Micro Devices, AMD Saxony LLC, Germany
P. Huebler, Advanced Micro Devices, AMD Saxony LLC, Germany
R. Kirsch, Advanced Micro Devices, AMD Saxony LLC, Germany
S. Kruegel, Advanced Micro Devices, AMD Saxony LLC, Germany
E. Langer, Advanced Micro Devices, AMD Saxony LLC, Germany
K. Romero, Advanced Micro Devices, AMD Saxony LLC, Germany
H. Ruelke, Advanced Micro Devices, AMD Saxony LLC, Germany
H. Schuehrer, Advanced Micro Devices, AMD Saxony LLC, Germany
A. Wei, Advanced Micro Devices, AMD Saxony LLC, Germany
T. Werner, Advanced Micro Devices, AMD Saxony LLC, Germany
K. Wieczorek, Advanced Micro Devices, AMD Saxony LLC, Germany
Correspondent: Click to Email
SOI and Low-k technologies are mature at AMD and run in high-volume production. These technologies were developed for the fabrication of the 9-metal AMD OpteronTM and AthlonTM64 microprocessors.@footnote 1@ The 130nm version has been in production for 18 months, and the 90nm product shipments began several months ago. The paper highlights several challenges found when moving from development to high-volume production. SOI process modules have been developed to support a smooth conversion from 130nm to 90nm. Basic learning can be applied for the extension to the 65nm node. Examples of advanced SOI process modules such as STI, ultra-thin gate dielectrics, gate pattering, and the Cu interconnect using CVD-deposited low-k dielectric will be shown. The early implementation of SOI and low-k dielectrics into high-volume manufacturing will allow for the successful extension into the next process generations. @footnote 1@AMD, the AMD Arrow logo, AMD Athlon, AMD Opteron and combinations thereof are trademarks of Advanced Micro Devices, Inc.