AVS 51st International Symposium
    Manufacturing Science and Technology Wednesday Sessions
       Session MS+AS-WeA

Paper MS+AS-WeA8
Total Analysis of the Gases in Semiconductor Manufacturing Process: Use of Ion Attachment Mass Spectrometry

Wednesday, November 17, 2004, 4:20 pm, Room 303B

Session: Non-Destructive Analysis and Metrology for Advanced Manufacturing
Presenter: M. Nakamura, ANELVA Technix Corporation, Japan
Authors: M. Nakamura, ANELVA Technix Corporation, Japan
Y. Taneda, ANELVA Technix Corporation, Japan
Y. Hirano, ANELVA Technix Corporation, Japan
Y. Shiokawa, ANELVA Technix Corporation, Japan
M. Takayanagi, Tokyo University of Agriculture and Technology, Japan
M. Nakata, Tokyo University of Agriculture and Technology, Japan
Correspondent: Click to Email
Ion attachment mass spectrometry (IAMS)@footnote 1@ is a powerful tool to monitor semiconductor manufacturing process@footnote 2-3@ by analyzing the molecules in the gas because with IAMS fragment-free mass spectra can be obtained; i.e. only quasi-molecular ions without being suffered by dissociation are observed. The fragment-free detection is impossible with other ionization techniques such as the electron ionization. There are two-type equipments of IAMS; one for the process at the pressure from 100 Pa to atmospheric pressure, and the other for the process at several Pa. We analyzed the process for manufacturing semiconductor by measuring mass spectra of gases in the reaction chamber and of the exhaust gas simultaneously with these equipments. Very high frequency capacitively coupled plasma (VHF-CCP) (60 MHz, 1000 W) was produced in the reaction chamber by providing 2 Pa of Ar/c-C@sub 4@F@sub 8@/O@sub 2@ (100, 2, and 6 sccm, respectively). The equipment for gases at several Pa was installed on the sidewall of the reaction chamber with a connection pipe of 100-mm length. At the same time the exhaust gas from the reaction chamber was analyzed after the rough pump with the other IAMS equipment. Polymerized compounds such as carbonyl fluoloride (C@sub 4@OF@sub 8@, C@sub 5@OF@sub 10@, and so on) and other compounds were found not only in the exhaust gas@footnote 2@ but also in the reaction chamber. The kinds of compounds in the exhaust gas are less than those at the reaction chamber, suggesting the dissociation and the polymerization at the pumping line. We present in our talk about c-C@sub 4@F@sub 8@ plasma in other conditions, SiH@sub 4@ plasma, and other processes to show the applicability of IAMS. The authors are grateful to Dr. H. Ito et al. of ASET for their support to the experiments. @FootnoteText@ 1 T. Fujii, Mass Spectrom. Rev. 19, 111 (2000). 2 M. Nakamura et al., J. Vac. Sci. Technol. A 19, 1105(2001). 3 Y. Shiokawa et al., AVS Int. Sympo., PS-ThA1 (2003).