AVS 51st International Symposium
    Manufacturing Science and Technology Wednesday Sessions
       Session MS+AS-WeA

Paper MS+AS-WeA1
Advances in X-ray Reflectivity (XRR) and X-ray Fluorescence (XRF) Measurements Provide Unique Advantages for Barrier and Metal Layer Measurements of 65 nm Node Devices

Wednesday, November 17, 2004, 2:00 pm, Room 303B

Session: Non-Destructive Analysis and Metrology for Advanced Manufacturing
Presenter: S. Terada, Technos Company Limited, Japan
Authors: J.S. Spear, Technos International
H. Murakami, Technos Company Limited, Japan
S. Terada, Technos Company Limited, Japan
Correspondent: Click to Email
We have developed a thin-film metrology tool that fulfills the metrology requirements for the production of 65nm node technology and beyond. This tool combines X-ray Reflectivity (XRR) and X-ray Fluorescence (XRF) measurements to provide accurate, high throughput, measurements. Improvements in both the XRR and XRF configurations were made to allow high throughput measurements on films as thin as 0.5 nm. One of the challenges for the 65nm node is measuring the Cu metal layers and their accompanying barrier layers. The difficulty in measuring these layers is increased since the barrier is often a bi-layer composed of both TaN and Ta. This paper describes how a combined XRR XRF tool can be used to accurately measure these individual layers with optimum throughput.