| AVS 50th International Symposium | |
| Plasma Science and Technology | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | PS2-ThM1 Invited Paper Smart Nanoprocess for Organic Low-k Film Etching M. Hori, Nagoya University, Japan |
| 9:00am | PS2-ThM3 Etching Mechanisms of Methylsilsesquioxane Low-k Material in High Density Fluorocarbon Plasma D. Eon, V. Raballand, G. Cartry, M.C. Peignon-Fernandez, C. Cardinaud, CNRS, University of Nantes, France |
| 9:20am | PS2-ThM4 Low Damage Low-k Film Etching using Advanced Neutral Beams H. Ohtake, N. Inoue, T. Ozaki, S. Samukawa, Tohoku University, Japan |
| 9:40am | PS2-ThM5 Control of Degradation Thickness on SiOCH Surface T. Tatsumi, T. Saitoh, A. Ando, K. Nagahata, Y. Morita, Sony Corporation, Japan |
| 10:00am | PS2-ThM6 Three-dimensional Feature Profile Evolution during Etching of Porous Dielectric Materials Y.H. Im, M.O. Bloomfield, T.S. Cale, Rensselaer Polytechnic Institute |
| 10:20am | PS2-ThM7 Etching of a Porous SiOC with Varied Porosity in Fluorocarbon Based-plasma N. Posseme, STMicroelectonics, France, T. Chevolleau, L. Vallier, O. Joubert, CNRS/LTM, France, I. Thomas-Boutherin, STMicroelectronics, France |
| 10:40am | PS2-ThM8 In-situ Real-time Monitoring of Profile Evolution During Plasma Etching H. Gerung, C.J. Brinker, S.R.J. Brueck, S.M. Han, University of New Mexico |
| 11:00am | PS2-ThM9 Critical Issues in Dual Damascene Etch M. Hussein, M. Heckscher, S. Suri, Intel Corporation |
| 11:20am | PS2-ThM10 In-Situ Etch-Stop Etch for Cu/Low-k Damascene Etch Applications P. Jiang, R. Kraft, E. Burke, Texas Instruments |
| 11:40am | PS2-ThM11 Study of CO addition to C@sub 4@F@sub 8@ or C@sub 4@F@sub 8@/Ar Plasmas for Selective Etching of Organosilicate Glass (OSG) over SiC L. Ling, G.S. Oehrlein, X. Hua, X. Li, University of Maryland, College Park, F.G. Celii, K.H.R. Kirmse, P. Jiang, Texas Instruments |