| AVS 50th International Symposium | |
| Plasma Science and Technology | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| PS-TuP1 Silicon Dioxide Etching Processes Employing Electron Beam Excited Plasmas M. Ito, K. Takeda, Y. Tomekawa, M. Iwawaki, T. Shiina, Y. Okamura, Wakayama University, Japan, M. Hori, T. Goto, Nagoya University, Japan |
| PS-TuP2 A Novel Si/SiO@sub 2@ Etching Technique for Minimizing Charge-induced Microscopic Non-uniformity in Plasma Etching K.H. Baek, Samsung Electronics, South Korea, D.H. Lee, S.J. Jung, Sungkyunkwan University, South Korea, C.J. Kang, Samsung Electronics, South Korea, G.Y. Yeom, Sungkyunkwan University, South Korea |
| PS-TuP3 Effects of Substrate Temperature and Ultraviolet Radiation on the Etching of Copper Films using Inductively Coupled Chlorine-based Plasmas K.H. Jang, Sungkyunkwan University, South Korea, H.R. Kim, W.J. Lee, IMG, LG-Production Engineering Research Center, G.Y. Yeom, Sungkyunkwan University, South Korea |
| PS-TuP4 The Electrical Properties of SBT Thin Films Etched in BCl@sub 3@/Cl@sub 2@/Ar Plasma J.K. Kim, C.I. Kim, K.T. Kim, D.P. Kim, Chung-Ang University, Korea |
| PS-TuP5 Modeling of Etching Mechanism of PZT in Cl@sub 2@ Plasma with the Addition of Ar, O@sub 2@ S.M. Koo, C.I. Kim, D.P. Kim, K.T. Kim, Chung-Ang University, Korea |
| PS-TuP6 Etching Characteristics of LNO (LaNiO@sub 3@) Thin Films Using Inductively Coupled Plasma C.I. Kim, J.W. Yeo, K.T. Kim, D.P. Kim, Chung-Ang University, Korea |
| PS-TuP7 Plasma Etching of Cantilever Epitaxy Sapphire Substrates K.C. Cross, K.H.A. Bogart, C.C. Mitchell, R.D. Briggs, Sandia National Laboratories |
| PS-TuP8 Effect of O@sub 2@/Cl@sub 2@ Gas Mixing Ratio on Dry Etching Characteristics and Electrical Properties of Bi@sub 4-x@La@sub x@Ti@sub 3@O@sub 12@ Films D.P. Kim, C.I. Kim, K.T. Kim, Chung-Ang University, Korea, A.M. Efremov, Ivanovo State University of Chemistry and Technology, Russia |
| PS-TuP10 Production of Electron-Temperature-Controllable ECR Plasma for Thin Film Deposition N. Itagaki, H. Muta, Kyushu University, Japan, N. Ishii, Tokyo Electron Co. Ltd., Japan, Y. Kawai, Kyushu University, Japan |
| PS-TuP11 Fabrication of Carbon Nanowalls Using RF Plasma-Enhanced Chemical Vapor Deposition Assisted by Hydrogen Radical Injection@footnote 1@ K. Shiji, M. Hiramatsu, T. Kadoya, H. Amano, Y. Ando, Meijo University, Japan, M. Hori, Nagoya University, Japan |
| PS-TuP12 Surface and Gas-phase Reactions in Plasma CVD using Cu(EDMDD)@sub 2@ as Source Material K. Takenaka, M. Takeshita, M. Kita, K. Koga, M. Shiratani, Y. Watanabe, Kyushu University, Japan, T. Shingen, Asahi Denka Kogyo K.K., Japan |
| PS-TuP13 Sub-Millimeter Absorption Measurements of Temperature and Density in Fluorocarbon Plasmas E.C. Benck, K. Siegrist, D. Pusquellic, National Institute of Standards and Technology |
| PS-TuP14 Plasma Frequency Measurements for Absolute Plasma Density by Means of Wave Cutoff Method J.H. Kim, Y.H. Shin, K.H. Chung, Korea Research Institute of Standards and Science |